Flexible Antiferromagnetic FeRh Tapes as Memory Elements

The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coa...

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Detalles Bibliográficos
Autores: Fina, Ignasi, Dix, Nico, Menéndez, Enric, Crespi, Anna, Foerster, Michael, Aballe, Lucía, Sánchez Barrera, Florencio, Fontcuberta, Josep
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2020
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/230312
Acceso en línea:http://hdl.handle.net/10261/230312
Access Level:acceso abierto
Palabra clave:Flexible electronics
FeRh
Flexible magnets
Thin films
Antiferromagnetic spintronics
Descripción
Sumario:The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large-scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 °C. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05%) is used to illustrate data writing/reading capability.