Nanocrystalline silicon optomechanical cavities

Silicon on insulator photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, there are some constraints such as the high cost of the wafers and limitation to a single physical device level. In the present work we investigate nanocrystalli...

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Detalhes bibliográficos
Autores: Navarro Urrios, Daniel|||0000-0001-9055-1583, Capuj, Nestor Eduardo|||0000-0002-9042-2041, Maire, Jeremie|||0000-0002-9921-4804, Colombano Sosa, Martin|||0000-0002-2003-8597, Jaramillo Fernández, Juliana|||0000-0002-4787-3904, Chávez Ángel, Emigdio|||0000-0002-9783-0806, Martin, L. L., Mercadé, L., Griol, Amadeu|||0000-0002-5428-5713, Martínez, Alejandro|||0000-0001-5448-0140, Sotomayor Torres, Clivia M.|||0000-0001-9986-2716, Ahopelto, Jouni|||0000-0003-3372-6097
Formato: artículo
Fecha de publicación:2018
País:España
Recursos:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:211133
Acesso em linha:https://ddd.uab.cat/record/211133
https://dx.doi.org/urn:doi:10.1364/OE.26.009829
Access Level:acceso abierto
Palavra-chave:Alternative materials
Crystal cavities
Dynamical behaviours
Input laser power
Optical and mechanical properties
Optomechanical
Optomechanical cavities
Physical devices
Descrição
Resumo:Silicon on insulator photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, there are some constraints such as the high cost of the wafers and limitation to a single physical device level. In the present work we investigate nanocrystalline silicon as an alternative material for optomechanical devices. In particular, we demonstrate that optomechanical crystal cavities fabricated of nanocrystalline silicon have optical and mechanical properties enabling non-linear dynamical behaviour and effects such as thermo-optic/free-carrier-dispersion self-pulsing, phonon lasing and chaos, all at low input laser power and with typical frequencies as high as 0.3 GHz.