Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices

In this work, we explore the effect of ultrahigh tensile strain on electrical transport properties of silicon. By integrating vapor-liquid-solid-grown nanowires into a micromechanical straining device, we demonstrate uniaxial tensile strain levels up to 9.5%. Thereby the triply degenerated phonon di...

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Detalles Bibliográficos
Autores: Bartmann, Maximilian G., Glassner, Sebastian, Sistani, Masiar, Rurali, Riccardo, Palummo, Maurizia, Cartoixà, Xavier, Smoliner, Jürgen, Lugstein, Alois
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2024
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/365016
Acceso en línea:http://hdl.handle.net/10261/365016
https://api.elsevier.com/content/abstract/scopus_id/85196625603
Access Level:acceso abierto
Palabra clave:Schottky contacts
Band gap engineering
Nanowire
Silicon
Strain
id ES_8d22d42ea6dfdb616ac7b0b2d5094ca9
oai_identifier_str oai:digital.csic.es:10261/365016
network_acronym_str ES
network_name_str España
repository_id_str
spelling Electronic Transport Modulation in Ultrastrained Silicon Nanowire DevicesBartmann, Maximilian G.Glassner, SebastianSistani, MasiarRurali, RiccardoPalummo, MauriziaCartoixà, XavierSmoliner, JürgenLugstein, AloisSchottky contactsBand gap engineeringNanowireSiliconStrainIn this work, we explore the effect of ultrahigh tensile strain on electrical transport properties of silicon. By integrating vapor-liquid-solid-grown nanowires into a micromechanical straining device, we demonstrate uniaxial tensile strain levels up to 9.5%. Thereby the triply degenerated phonon dispersion relation at the Γ-point of silicon disentangle and the longitudinal phonon modes are used to precisely determine the extent of mechanical strain. Simultaneous electrical transport measurements showed a significant enhancement in the electrical conductance. Aside from considerable reduction of the Si bulk resistivity due to strain-induced band gap narrowing, comparison with quasi-particle GW calculations further reveals that the effective Schottky barrier height at the electrical contacts undergoes a substantial reduction. For these reasons, nanowire devices with ultrastrained channels may be promising candidates for future applications of high-performance silicon-based devices.The authors gratefully acknowledge financial support by the Austrian Science Fund (FWF): Project No. P29729-N27. R.R. acknowledges financial support from MCIN/AEI/10.13039/501100011033 under grant PID2020–119777GB-I00, the Severo Ochoa Centres of Excellence Program under grant CEX2023-001263-S, and the Generalitat de Catalunya under grant 2021 SGR01519. M.P. acknowledges Union─NextGenerationEU under the Italian National Center 1 on HPC–Spoke 6: “Multiscale Modelling and Engineering Applications”. X.C acknowledges financial support by Spain’s Ministerio de Ciencia e Innovación under grant no. PID2021-127840NB-I00 (MICINN/AEI/FEDER, UE).With funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2019-000917-S).Peer reviewedAmerican Chemical SocietyAustrian Science FundMinisterio de Ciencia, Innovación y Universidades (España)Agencia Estatal de Investigación (España)Generalitat de CatalunyaMinisterio de Ciencia e Innovación (España)European CommissionSistani, Masiar [0000-0001-5730-234X]Rurali, Riccardo [0000-0002-4086-4191]Cartoixà, Xavier [0000-0003-1905-5979]Lugstein, Alois [0000-0001-5693-4775]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202420242024info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/365016https://api.elsevier.com/content/abstract/scopus_id/85196625603reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/MICIU/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/PID2020–119777GB-I00info:eu-repo/grantAgreement/AEI/Plan Estatal de investigación Científica y Técnica y de Innovación 2021-2023/CEX2023-001263-SACS applied materials & interfaceshttp://doi.org/10.1021/acsami.4c05477Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3650162026-05-22T06:33:51Z
dc.title.none.fl_str_mv Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices
title Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices
spellingShingle Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices
Bartmann, Maximilian G.
Schottky contacts
Band gap engineering
Nanowire
Silicon
Strain
title_short Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices
title_full Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices
title_fullStr Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices
title_full_unstemmed Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices
title_sort Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices
dc.creator.none.fl_str_mv Bartmann, Maximilian G.
Glassner, Sebastian
Sistani, Masiar
Rurali, Riccardo
Palummo, Maurizia
Cartoixà, Xavier
Smoliner, Jürgen
Lugstein, Alois
author Bartmann, Maximilian G.
author_facet Bartmann, Maximilian G.
Glassner, Sebastian
Sistani, Masiar
Rurali, Riccardo
Palummo, Maurizia
Cartoixà, Xavier
Smoliner, Jürgen
Lugstein, Alois
author_role author
author2 Glassner, Sebastian
Sistani, Masiar
Rurali, Riccardo
Palummo, Maurizia
Cartoixà, Xavier
Smoliner, Jürgen
Lugstein, Alois
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Austrian Science Fund
Ministerio de Ciencia, Innovación y Universidades (España)
Agencia Estatal de Investigación (España)
Generalitat de Catalunya
Ministerio de Ciencia e Innovación (España)
European Commission
Sistani, Masiar [0000-0001-5730-234X]
Rurali, Riccardo [0000-0002-4086-4191]
Cartoixà, Xavier [0000-0003-1905-5979]
Lugstein, Alois [0000-0001-5693-4775]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Schottky contacts
Band gap engineering

Nanowire
Silicon
Strain
topic Schottky contacts
Band gap engineering
Nanowire
Silicon
Strain
description In this work, we explore the effect of ultrahigh tensile strain on electrical transport properties of silicon. By integrating vapor-liquid-solid-grown nanowires into a micromechanical straining device, we demonstrate uniaxial tensile strain levels up to 9.5%. Thereby the triply degenerated phonon dispersion relation at the Γ-point of silicon disentangle and the longitudinal phonon modes are used to precisely determine the extent of mechanical strain. Simultaneous electrical transport measurements showed a significant enhancement in the electrical conductance. Aside from considerable reduction of the Si bulk resistivity due to strain-induced band gap narrowing, comparison with quasi-particle GW calculations further reveals that the effective Schottky barrier height at the electrical contacts undergoes a substantial reduction. For these reasons, nanowire devices with ultrastrained channels may be promising candidates for future applications of high-performance silicon-based devices.
publishDate 2024
dc.date.none.fl_str_mv 2024
2024
2024
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/365016
https://api.elsevier.com/content/abstract/scopus_id/85196625603
url http://hdl.handle.net/10261/365016
https://api.elsevier.com/content/abstract/scopus_id/85196625603
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/MICIU/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/PID2020–119777GB-I00
info:eu-repo/grantAgreement/AEI/Plan Estatal de investigación Científica y Técnica y de Innovación 2021-2023/CEX2023-001263-S
ACS applied materials & interfaces
http://doi.org/10.1021/acsami.4c05477
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869413005039501312
score 15,81155

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