Effect of ionizing radiation on quasi-floating gate transistors

Low power and low voltage are key in modern design. The quasi-floating gate (QFG) has proven to be an adequate choice in numerous applications. However, so far, its use has not spread in high-radiation environments because of the lack of studies on the performance of this technique under radiation....

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Autores: Luján-Martínez, Clara, Hinojo-Montero, José, Muñoz, Fernando, Palomo, Francisco Rogelio, Martín Holgado, Pedro, Morilla, Yolanda
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2023
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/339473
Acceso en línea:http://hdl.handle.net/10261/339473
https://api.elsevier.com/content/abstract/scopus_id/85162165264
Access Level:acceso abierto
Palabra clave:Analogue and mixed-signal design
Ionizing radiation
Low power
Low voltage
Pseudoresistors
QFG
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spelling Effect of ionizing radiation on quasi-floating gate transistorsLuján-Martínez, ClaraHinojo-Montero, JoséMuñoz, FernandoPalomo, Francisco RogelioMartín Holgado, PedroMorilla, YolandaAnalogue and mixed-signal designIonizing radiationLow powerLow voltagePseudoresistorsQFGLow power and low voltage are key in modern design. The quasi-floating gate (QFG) has proven to be an adequate choice in numerous applications. However, so far, its use has not spread in high-radiation environments because of the lack of studies on the performance of this technique under radiation. This work addresses the effect of ionizing radiation in the QFG transistor. To this end, a specific DUT has been designed and irradiated up to 2,25 Mrad. The experimental results show a tolerable reduction in the equivalent resistivity of the pseudoresistor (a reverse biased n-well PN junction). The effect is due to the increase in the reverse saturation current of the diode present between the pseudoresistor's terminals, which is consistent with Displacement Damage Dose (DDD).Grant PID2021-127712OB-C22 funded by MCIN/AEI/ 10.13039/501100011033 and by “ERDF A way of making Europe” and grant P18-FR-4317 funded by the Andalousian “Consejería de Transformación Económica, Industria, Conocimiento y Universidades”Peer reviewedElsevierMinisterio de Ciencia e Innovación (España)Agencia Estatal de Investigación (España)European CommissionJunta de AndalucíaConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202320232023info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10261/339473https://api.elsevier.com/content/abstract/scopus_id/85162165264reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttps://doi.org/10.1016/j.aeue.2023.154777Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3394732026-05-22T06:33:51Z
dc.title.none.fl_str_mv Effect of ionizing radiation on quasi-floating gate transistors
title Effect of ionizing radiation on quasi-floating gate transistors
spellingShingle Effect of ionizing radiation on quasi-floating gate transistors
Luján-Martínez, Clara
Analogue and mixed-signal design
Ionizing radiation
Low power
Low voltage
Pseudoresistors
QFG
title_short Effect of ionizing radiation on quasi-floating gate transistors
title_full Effect of ionizing radiation on quasi-floating gate transistors
title_fullStr Effect of ionizing radiation on quasi-floating gate transistors
title_full_unstemmed Effect of ionizing radiation on quasi-floating gate transistors
title_sort Effect of ionizing radiation on quasi-floating gate transistors
dc.creator.none.fl_str_mv Luján-Martínez, Clara
Hinojo-Montero, José
Muñoz, Fernando
Palomo, Francisco Rogelio
Martín Holgado, Pedro
Morilla, Yolanda
author Luján-Martínez, Clara
author_facet Luján-Martínez, Clara
Hinojo-Montero, José
Muñoz, Fernando
Palomo, Francisco Rogelio
Martín Holgado, Pedro
Morilla, Yolanda
author_role author
author2 Hinojo-Montero, José
Muñoz, Fernando
Palomo, Francisco Rogelio
Martín Holgado, Pedro
Morilla, Yolanda
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Ministerio de Ciencia e Innovación (España)
Agencia Estatal de Investigación (España)
European Commission
Junta de Andalucía
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Analogue and mixed-signal design
Ionizing radiation
Low power
Low voltage
Pseudoresistors
QFG
topic Analogue and mixed-signal design
Ionizing radiation
Low power
Low voltage
Pseudoresistors
QFG
description Low power and low voltage are key in modern design. The quasi-floating gate (QFG) has proven to be an adequate choice in numerous applications. However, so far, its use has not spread in high-radiation environments because of the lack of studies on the performance of this technique under radiation. This work addresses the effect of ionizing radiation in the QFG transistor. To this end, a specific DUT has been designed and irradiated up to 2,25 Mrad. The experimental results show a tolerable reduction in the equivalent resistivity of the pseudoresistor (a reverse biased n-well PN junction). The effect is due to the increase in the reverse saturation current of the diode present between the pseudoresistor's terminals, which is consistent with Displacement Damage Dose (DDD).
publishDate 2023
dc.date.none.fl_str_mv 2023
2023
2023
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/339473
https://api.elsevier.com/content/abstract/scopus_id/85162165264
url http://hdl.handle.net/10261/339473
https://api.elsevier.com/content/abstract/scopus_id/85162165264
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv https://doi.org/10.1016/j.aeue.2023.154777
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.811543

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