Low-Crosstalk in Silicon-On-Insulator Waveguide crossings With Optimized-Angle
[EN] Low crosstalk losses in silicon-on-insulator waveguides are demonstrated by choosing the optimum crossing angle. It is obtained that by using the crossing angles of 60 degrees or 120 degrees instead of the conventional 90 degrees crossing angle crosstalk losses are improved by more than 10 dB w...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2007 |
| País: | España |
| Institución: | Universitat Politècnica de València (UPV) |
| Repositorio: | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| Idioma: | inglés |
| OAI Identifier: | oai:riunet.upv.es:10251/231338 |
| Acceso en línea: | https://riunet.upv.es/handle/10251/231338 |
| Access Level: | acceso abierto |
| Palabra clave: | Crossings Passive circuits Photonic integrated circuits Silicon-on-insulator (SOI) technology |
| Sumario: | [EN] Low crosstalk losses in silicon-on-insulator waveguides are demonstrated by choosing the optimum crossing angle. It is obtained that by using the crossing angles of 60 degrees or 120 degrees instead of the conventional 90 degrees crossing angle crosstalk losses are improved by more than 10 dB without degrading transmission losses. Experimental results show a very good agreement with three-dimensional finite-difference time-domain simulation results. The proposed crossing structure has a high compactness, a broad bandwidth with almost flat transmission losses and constant crosstalk losses, and is robust against fabrication inaccuracies. |
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