Charge transfer characterization of ALD-Grown TiO₂ protective layers in silicon photocathodes

A critical parameter for the implementation of standard high-efficiency photovoltaic absorber materials for photoelectrochemical (PEC) water splitting is its proper protection from chemical corrosion while remaining transparent and highly conductive. Atomic layer deposited (ALD) TiO₂ layers fulfill...

Descripción completa

Detalles Bibliográficos
Autores: Ros, Carles|||0000-0002-9148-2767, Andreu, Teresa|||0000-0002-2804-4545, Hernández-Alonso, María Dolores, Penelas-Pérez, Germán, Arbiol i Cobos, Jordi|||0000-0002-0695-1726, Morante, Joan Ramon|||0000-0002-4981-4633
Tipo de recurso: artículo
Fecha de publicación:2017
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:194887
Acceso en línea:https://ddd.uab.cat/record/194887
https://dx.doi.org/urn:doi:10.1021/acsami.7b02996
Access Level:acceso abierto
Palabra clave:Atomic layer deposition
PEC cells
Protecting overlayers
Silicon
Solar hydrogen production
Titanium dioxide
Water splitting
id ES_86c59a8a5b9840d263ac4bd53a12949e
oai_identifier_str oai:ddd.uab.cat:194887
network_acronym_str ES
network_name_str España
repository_id_str
spelling Charge transfer characterization of ALD-Grown TiO₂ protective layers in silicon photocathodesRos, Carles|||0000-0002-9148-2767Andreu, Teresa|||0000-0002-2804-4545Hernández-Alonso, María DoloresPenelas-Pérez, GermánArbiol i Cobos, Jordi|||0000-0002-0695-1726Morante, Joan Ramon|||0000-0002-4981-4633Atomic layer depositionPEC cellsProtecting overlayersSiliconSolar hydrogen productionTitanium dioxideWater splittingA critical parameter for the implementation of standard high-efficiency photovoltaic absorber materials for photoelectrochemical (PEC) water splitting is its proper protection from chemical corrosion while remaining transparent and highly conductive. Atomic layer deposited (ALD) TiO₂ layers fulfill material requirements while conformally protecting the underlying photoabsorber. Nanoscale conductivity of ALD TiO₂ protective layers on silicon based photocathodes has been analyzed, proving that the conduction path is through the columnar crystalline structure of TiO₂. Deposition temperature has been explored from 100 to 300 ºC, and a temperature threshold is found to be mandatory for an efficient charge transfer, as a consequence of layer crystallization between 100 and 200 ºC. Completely crystallized TiO₂ is demonstrated to be mandatory for long term stability, as seen in the 300 h continuous operation test. 22017-01-0120172017-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/194887https://dx.doi.org/urn:doi:10.1021/acsami.7b02996reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengAgència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-1638Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2014-59961-C2Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 BES-2015-071618Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 ENE2016-80788-C5-5-RMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2013-0295open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:1948872026-06-06T12:50:31Z
dc.title.none.fl_str_mv Charge transfer characterization of ALD-Grown TiO₂ protective layers in silicon photocathodes
title Charge transfer characterization of ALD-Grown TiO₂ protective layers in silicon photocathodes
spellingShingle Charge transfer characterization of ALD-Grown TiO₂ protective layers in silicon photocathodes
Ros, Carles|||0000-0002-9148-2767
Atomic layer deposition
PEC cells
Protecting overlayers
Silicon
Solar hydrogen production
Titanium dioxide
Water splitting
title_short Charge transfer characterization of ALD-Grown TiO₂ protective layers in silicon photocathodes
title_full Charge transfer characterization of ALD-Grown TiO₂ protective layers in silicon photocathodes
title_fullStr Charge transfer characterization of ALD-Grown TiO₂ protective layers in silicon photocathodes
title_full_unstemmed Charge transfer characterization of ALD-Grown TiO₂ protective layers in silicon photocathodes
title_sort Charge transfer characterization of ALD-Grown TiO₂ protective layers in silicon photocathodes
dc.creator.none.fl_str_mv Ros, Carles|||0000-0002-9148-2767
Andreu, Teresa|||0000-0002-2804-4545
Hernández-Alonso, María Dolores
Penelas-Pérez, Germán
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Morante, Joan Ramon|||0000-0002-4981-4633
author Ros, Carles|||0000-0002-9148-2767
author_facet Ros, Carles|||0000-0002-9148-2767
Andreu, Teresa|||0000-0002-2804-4545
Hernández-Alonso, María Dolores
Penelas-Pérez, Germán
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Morante, Joan Ramon|||0000-0002-4981-4633
author_role author
author2 Andreu, Teresa|||0000-0002-2804-4545
Hernández-Alonso, María Dolores
Penelas-Pérez, Germán
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Morante, Joan Ramon|||0000-0002-4981-4633
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Atomic layer deposition
PEC cells
Protecting overlayers
Silicon
Solar hydrogen production
Titanium dioxide
Water splitting
topic Atomic layer deposition
PEC cells
Protecting overlayers
Silicon
Solar hydrogen production
Titanium dioxide
Water splitting
description A critical parameter for the implementation of standard high-efficiency photovoltaic absorber materials for photoelectrochemical (PEC) water splitting is its proper protection from chemical corrosion while remaining transparent and highly conductive. Atomic layer deposited (ALD) TiO₂ layers fulfill material requirements while conformally protecting the underlying photoabsorber. Nanoscale conductivity of ALD TiO₂ protective layers on silicon based photocathodes has been analyzed, proving that the conduction path is through the columnar crystalline structure of TiO₂. Deposition temperature has been explored from 100 to 300 ºC, and a temperature threshold is found to be mandatory for an efficient charge transfer, as a consequence of layer crystallization between 100 and 200 ºC. Completely crystallized TiO₂ is demonstrated to be mandatory for long term stability, as seen in the 300 h continuous operation test.
publishDate 2017
dc.date.none.fl_str_mv 2
2017-01-01
2017
2017-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/194887
https://dx.doi.org/urn:doi:10.1021/acsami.7b02996
url https://ddd.uab.cat/record/194887
https://dx.doi.org/urn:doi:10.1021/acsami.7b02996
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-1638
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2014-59961-C2
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 BES-2015-071618
Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 ENE2016-80788-C5-5-R
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2013-0295
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869412398312456192
score 15.301603

Similares en LA Referencia