Sawtooth superlattices in a 2-band semiconductor
We consider electron dynamics in two-band semiconductor superlattices within the envelope function approximation. We develop a numerical method, based on the properties of the periodic continued fractions, to find the dispersion relation inside allowed minibands and to obtain the envelope functions....
| Autores: | , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 1994 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/58966 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/58966 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Dimensional Band Structures Electric-Field Transitions Física de materiales |
| id |
ES_869485d77dc2b89b04497e5da0efaf8f |
|---|---|
| oai_identifier_str |
oai:docta.ucm.es:20.500.14352/58966 |
| network_acronym_str |
ES |
| network_name_str |
España |
| repository_id_str |
|
| spelling |
Sawtooth superlattices in a 2-band semiconductorDomínguez-Adame Acosta, FranciscoMéndez Martín, María Bianchi538.9Dimensional Band StructuresElectric-FieldTransitionsFísica de materialesWe consider electron dynamics in two-band semiconductor superlattices within the envelope function approximation. We develop a numerical method, based on the properties of the periodic continued fractions, to find the dispersion relation inside allowed minibands and to obtain the envelope functions. As an application, we concentrate on GaAs sawtooth-doped superlattices, consisting of periodic alternating n- and p-type delta-doped sheets separated by undoped material. Results are compared with one-band semiconductor predictions, and we find that coupling of bands in the host semiconductor indeed gives rise to relevant effects, especially for higher-minibands.IOP Publishing LTDUniversidad Complutense de Madrid19941994-07-0119941994-07-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/58966reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/589662026-06-02T12:44:21Z |
| dc.title.none.fl_str_mv |
Sawtooth superlattices in a 2-band semiconductor |
| title |
Sawtooth superlattices in a 2-band semiconductor |
| spellingShingle |
Sawtooth superlattices in a 2-band semiconductor Domínguez-Adame Acosta, Francisco 538.9 Dimensional Band Structures Electric-Field Transitions Física de materiales |
| title_short |
Sawtooth superlattices in a 2-band semiconductor |
| title_full |
Sawtooth superlattices in a 2-band semiconductor |
| title_fullStr |
Sawtooth superlattices in a 2-band semiconductor |
| title_full_unstemmed |
Sawtooth superlattices in a 2-band semiconductor |
| title_sort |
Sawtooth superlattices in a 2-band semiconductor |
| dc.creator.none.fl_str_mv |
Domínguez-Adame Acosta, Francisco Méndez Martín, María Bianchi |
| author |
Domínguez-Adame Acosta, Francisco |
| author_facet |
Domínguez-Adame Acosta, Francisco Méndez Martín, María Bianchi |
| author_role |
author |
| author2 |
Méndez Martín, María Bianchi |
| author2_role |
author |
| dc.contributor.none.fl_str_mv |
Universidad Complutense de Madrid |
| dc.subject.none.fl_str_mv |
538.9 Dimensional Band Structures Electric-Field Transitions Física de materiales |
| topic |
538.9 Dimensional Band Structures Electric-Field Transitions Física de materiales |
| description |
We consider electron dynamics in two-band semiconductor superlattices within the envelope function approximation. We develop a numerical method, based on the properties of the periodic continued fractions, to find the dispersion relation inside allowed minibands and to obtain the envelope functions. As an application, we concentrate on GaAs sawtooth-doped superlattices, consisting of periodic alternating n- and p-type delta-doped sheets separated by undoped material. Results are compared with one-band semiconductor predictions, and we find that coupling of bands in the host semiconductor indeed gives rise to relevant effects, especially for higher-minibands. |
| publishDate |
1994 |
| dc.date.none.fl_str_mv |
1994 1994-07-01 1994 1994-07-01 |
| dc.type.none.fl_str_mv |
journal article http://purl.org/coar/resource_type/c_6501 |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/20.500.14352/58966 |
| url |
https://hdl.handle.net/20.500.14352/58966 |
| dc.language.none.fl_str_mv |
Inglés eng |
| language_invalid_str_mv |
Inglés |
| language |
eng |
| dc.rights.none.fl_str_mv |
open access http://purl.org/coar/access_right/c_abf2 |
| dc.rights.openaire.fl_str_mv |
info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
open access http://purl.org/coar/access_right/c_abf2 |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
application/pdf |
| dc.publisher.none.fl_str_mv |
IOP Publishing LTD |
| publisher.none.fl_str_mv |
IOP Publishing LTD |
| dc.source.none.fl_str_mv |
reponame:Docta Complutense instname:Universidad Complutense de Madrid (UCM) |
| instname_str |
Universidad Complutense de Madrid (UCM) |
| reponame_str |
Docta Complutense |
| collection |
Docta Complutense |
| repository.name.fl_str_mv |
|
| repository.mail.fl_str_mv |
|
| _version_ |
1869412384195477504 |
| score |
15,300719 |