Electrically tunable nonequilibrium optical response of graphene

The ability to tune the optical response of a material via electrostatic gating is crucial for optoelectronic applications, such as electro-optic modulators, saturable absorbers, optical limiters, photodetectors, and transparent electrodes. The band structure of single layer graphene (SLG), with zer...

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Detalles Bibliográficos
Autores: Pogna, Eva A. A.|||0000-0003-4779-3549, Tomadin, Andrea, Balci, Osman|||0000-0003-2766-2197, Soavi, Giancarlo|||0000-0003-2434-2251, Paradisanos, Ioannis, Guizzardi, Michele, Pedrinazzi, Paolo, Mignuzzi, Sandro, Tielrooij, Klaas-Jan|||0000-0002-0055-6231, Polini, Marco, Ferrari, Andrea C.|||0000-0003-0907-9993, Cerullo, Giulio|||0000-0002-9534-2702
Tipo de recurso: artículo
Fecha de publicación:2022
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:264913
Acceso en línea:https://ddd.uab.cat/record/264913
https://dx.doi.org/urn:doi:10.1021/acsnano.1c04937
Access Level:acceso abierto
Palabra clave:Graphene
Cooling dynamics
Hot electrons
Tunable dynamics
Optical phonons
Phonon bottleneck
Descripción
Sumario:The ability to tune the optical response of a material via electrostatic gating is crucial for optoelectronic applications, such as electro-optic modulators, saturable absorbers, optical limiters, photodetectors, and transparent electrodes. The band structure of single layer graphene (SLG), with zero-gap, linearly dispersive conduction and valence bands, enables an easy control of the Fermi energy, E , and of the threshold for interband optical absorption. Here, we report the tunability of the SLG nonequilibrium optical response in the near-infrared (1000-1700 nm/0.729-1.240 eV), exploring a range of E from -650 to 250 meV by ionic liquid gating. As E increases from the Dirac point to the threshold for Pauli blocking of interband absorption, we observe a slow-down of the photobleaching relaxation dynamics, which we attribute to the quenching of optical phonon emission from photoexcited charge carriers. For E exceeding the Pauli blocking threshold, photobleaching eventually turns into photoinduced absorption, because the hot electrons' excitation increases the SLG absorption. The ability to control both recovery time and sign of the nonequilibrium optical response by electrostatic gating makes SLG ideal for tunable saturable absorbers with controlled dynamics.