Charge transport in polycrystalline graphene

Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. Unfortunately,...

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Detalles Bibliográficos
Autores: Cummings, Aron|||0000-0003-2307-497X, Duong, Dinh Loc|||0000-0002-4118-9589, Nguyen, Van Luan, Dinh, Van Tuan|||0000-0002-9605-2686, Kotakoski, Jani|||0000-0002-1301-5266, Barrios Vargas, José Eduardo|||0000-0002-6880-8941, Lee, Young Hee|||0000-0001-7403-8157, Roche, Stephan|||0000-0003-0323-4665
Tipo de recurso: artículo
Fecha de publicación:2014
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:232123
Acceso en línea:https://ddd.uab.cat/record/232123
https://dx.doi.org/urn:doi:10.1002/adma.201401389
Access Level:acceso abierto
Palabra clave:Graphene
Grain boundaries
Charge transport
Scaling law
Functionalization
Descripción
Sumario:Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. Unfortunately, CVD graphene is intrinsically polycrystalline, with pristine graphene grains stitched together by disordered grain boundaries, which can be either a blessing or a curse. On the one hand, grain boundaries are expected to degrade the electrical and mechanical properties of polycrystalline graphene, rendering the material undesirable for many applications. On the other hand, they exhibit an increased chemical reactivity, suggesting their potential application to sensing or as templates for synthesis of one-dimensional materials. Therefore, it is important to gain a deeper understanding of the structure and properties of graphene grain boundaries. Here, we review experimental progress on identification and electrical and chemical characterization of graphene grain boundaries. We use numerical simulations and transport measurements to demonstrate that electrical properties and chemical modification of graphene grain boundaries are strongly correlated. This not only provides guidelines for the improvement of graphene devices, but also opens a new research area of engineering graphene grain boundaries for highly sensitive electro-biochemical devices.