Influence of P+ - ZnTe back surface contact on photovoltaic performance of ZnTe based solar cells

[EN] In order to improve photovoltaic performance of solar cells based on ZnTe thin films two device structures have been proposed and its photovoltaic parameters have been numerically simulated using Solar Cell Capacitance Simulator software. The first one is the ZnO/CdS/ZnTe conventional structure...

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Autores: Bayad, Hamza, Elmanouni, Ahmed, Khattak, Yousaf Hameed, Ullah, Shafi, Baig, Faisal, Marí, B.|||0000-0003-0001-419X
Tipo de documento: artigo
Data de publicação:2018
País:España
Recursos:Universitat Politècnica de València (UPV)
Repositório:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
Idioma:inglês
OAI Identifier:oai:riunet.upv.es:10251/121742
Acesso em linha:https://riunet.upv.es/handle/10251/121742
Access Level:Acceso aberto
Palavra-chave:ZnTe
Numerical simulation
Back surface field
Solar cells
Photovoltaic performance
FISICA APLICADA
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spelling Influence of P+ - ZnTe back surface contact on photovoltaic performance of ZnTe based solar cellsBayad, HamzaElmanouni, AhmedKhattak, Yousaf HameedUllah, ShafiBaig, FaisalMarí, B.|||0000-0003-0001-419XZnTeNumerical simulationBack surface fieldSolar cellsPhotovoltaic performanceFISICA APLICADA[EN] In order to improve photovoltaic performance of solar cells based on ZnTe thin films two device structures have been proposed and its photovoltaic parameters have been numerically simulated using Solar Cell Capacitance Simulator software. The first one is the ZnO/CdS/ZnTe conventional structure and the second one is the ZnO/CdS/ZnTe/P+-ZnTe structure with a P+-ZnTe layer inserted at the back surface of ZnTe active layer to produce a back surface field effect which could reduce back carrier recombination and thus increase the photovoltaic conversion efficiency of cells. The effect of ZnO, CdS and ZnTe layer thicknesses and the P+-ZnTe added layer and its thickness have been optimized for producing maximum working parameters such as: open-circuit voltage Voc, short-circuit current density Jsc, fill factor FF, photovoltaic conversion efficiency ¿. The solar cell with ZnTe/P+-ZnTe junction showed remarkably higher conversion efficiency over the conventional solar cell based on ZnTe layer and the conversion efficiency of the ZnO/CdS/ZnTe/P+-ZnTe solar cell was found to be dependent on ZnTe and P+-ZnTe layer thicknesses. The optimization of ZnTe, CdS and ZnTe layers and the inserting of P+-ZnTe back surface layer results in an enhancement of the energy conversion efficiency since its maximum has increased from 10% for ZnO, CdS and ZnTe layer thicknesses of 0.05, 0.08 and 2 µm, respectively to 13.37% when ZnO, CdS, ZnTe and P+-ZnTe layer thicknesses are closed to 0.03, 0.03, 0.5 and 0.1 µm, respectively. Furthermore, the highest calculated output parameters have been Jsc = 9.35 mA/cm2, Voc = 1.81 V, ¿=13.37% and FF= 79.05% achieved with ZnO, CdS, ZnTe, and P+-ZnTe layer thicknesses about 0.03, 0.03, 0.5 and 0.1 µm, respectively. Finally, the spectral response in the long-wavelength region for ZnO/CdS/ZnTe solar cells has decreased at the increase of back surface recombination velocity. However, it has exhibited a red shift and showed no dependence of back surface recombination velocity for ZnO/CdS/ZnTe/P+-ZnTe solar cells.This work was supported by Ministerio de Economia y Competitividad (ENE2016-77798-C4-2-R) and Generalitat valenciana (Prometeus 2014/044).Springer-VerlagDepartamento de Física AplicadaEscuela Técnica Superior de Ingeniería Aeroespacial y Diseño IndustrialInstituto de Diseño para la Fabricación y Producción AutomatizadaGeneralitat ValencianaMinisterio de Economía y CompetitividadRepositorio Institucional de la Universitat Politècnica de València Riunet20182018-01-01journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfapplication/pdfhttps://riunet.upv.es/handle/10251/121742reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valénciainstname:Universitat Politècnica de València (UPV)InglésengMinisterio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 ENE2016-77798-C4-2-R APROVECHAMIENTO DE LA LUZ SOLAR CON PROCESOS DE DOS FOTONES-TFGeneralitat Valenciana https://doi.org/10.13039/501100003359 PROMETEOII%2F2014%2F044 Técnicas de Fabricación Avanzada y Control de Calidad de nuevos materiales multifuncionales en movilidad sostenibleopen accesshttp://purl.org/coar/access_right/c_abf2Reserva de todos los derechoshttp://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:riunet.upv.es:10251/1217422026-06-13T07:49:27Z
dc.title.none.fl_str_mv Influence of P+ - ZnTe back surface contact on photovoltaic performance of ZnTe based solar cells
title Influence of P+ - ZnTe back surface contact on photovoltaic performance of ZnTe based solar cells
spellingShingle Influence of P+ - ZnTe back surface contact on photovoltaic performance of ZnTe based solar cells
Bayad, Hamza
ZnTe
Numerical simulation
Back surface field
Solar cells
Photovoltaic performance
FISICA APLICADA
title_short Influence of P+ - ZnTe back surface contact on photovoltaic performance of ZnTe based solar cells
title_full Influence of P+ - ZnTe back surface contact on photovoltaic performance of ZnTe based solar cells
title_fullStr Influence of P+ - ZnTe back surface contact on photovoltaic performance of ZnTe based solar cells
title_full_unstemmed Influence of P+ - ZnTe back surface contact on photovoltaic performance of ZnTe based solar cells
title_sort Influence of P+ - ZnTe back surface contact on photovoltaic performance of ZnTe based solar cells
dc.creator.none.fl_str_mv Bayad, Hamza
Elmanouni, Ahmed
Khattak, Yousaf Hameed
Ullah, Shafi
Baig, Faisal
Marí, B.|||0000-0003-0001-419X
author Bayad, Hamza
author_facet Bayad, Hamza
Elmanouni, Ahmed
Khattak, Yousaf Hameed
Ullah, Shafi
Baig, Faisal
Marí, B.|||0000-0003-0001-419X
author_role author
author2 Elmanouni, Ahmed
Khattak, Yousaf Hameed
Ullah, Shafi
Baig, Faisal
Marí, B.|||0000-0003-0001-419X
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Departamento de Física Aplicada
Escuela Técnica Superior de Ingeniería Aeroespacial y Diseño Industrial
Instituto de Diseño para la Fabricación y Producción Automatizada
Generalitat Valenciana
Ministerio de Economía y Competitividad
Repositorio Institucional de la Universitat Politècnica de València Riunet
dc.subject.none.fl_str_mv ZnTe
Numerical simulation
Back surface field
Solar cells
Photovoltaic performance
FISICA APLICADA
topic ZnTe
Numerical simulation
Back surface field
Solar cells
Photovoltaic performance
FISICA APLICADA
description [EN] In order to improve photovoltaic performance of solar cells based on ZnTe thin films two device structures have been proposed and its photovoltaic parameters have been numerically simulated using Solar Cell Capacitance Simulator software. The first one is the ZnO/CdS/ZnTe conventional structure and the second one is the ZnO/CdS/ZnTe/P+-ZnTe structure with a P+-ZnTe layer inserted at the back surface of ZnTe active layer to produce a back surface field effect which could reduce back carrier recombination and thus increase the photovoltaic conversion efficiency of cells. The effect of ZnO, CdS and ZnTe layer thicknesses and the P+-ZnTe added layer and its thickness have been optimized for producing maximum working parameters such as: open-circuit voltage Voc, short-circuit current density Jsc, fill factor FF, photovoltaic conversion efficiency ¿. The solar cell with ZnTe/P+-ZnTe junction showed remarkably higher conversion efficiency over the conventional solar cell based on ZnTe layer and the conversion efficiency of the ZnO/CdS/ZnTe/P+-ZnTe solar cell was found to be dependent on ZnTe and P+-ZnTe layer thicknesses. The optimization of ZnTe, CdS and ZnTe layers and the inserting of P+-ZnTe back surface layer results in an enhancement of the energy conversion efficiency since its maximum has increased from 10% for ZnO, CdS and ZnTe layer thicknesses of 0.05, 0.08 and 2 µm, respectively to 13.37% when ZnO, CdS, ZnTe and P+-ZnTe layer thicknesses are closed to 0.03, 0.03, 0.5 and 0.1 µm, respectively. Furthermore, the highest calculated output parameters have been Jsc = 9.35 mA/cm2, Voc = 1.81 V, ¿=13.37% and FF= 79.05% achieved with ZnO, CdS, ZnTe, and P+-ZnTe layer thicknesses about 0.03, 0.03, 0.5 and 0.1 µm, respectively. Finally, the spectral response in the long-wavelength region for ZnO/CdS/ZnTe solar cells has decreased at the increase of back surface recombination velocity. However, it has exhibited a red shift and showed no dependence of back surface recombination velocity for ZnO/CdS/ZnTe/P+-ZnTe solar cells.
publishDate 2018
dc.date.none.fl_str_mv 2018
2018-01-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://riunet.upv.es/handle/10251/121742
url https://riunet.upv.es/handle/10251/121742
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 ENE2016-77798-C4-2-R APROVECHAMIENTO DE LA LUZ SOLAR CON PROCESOS DE DOS FOTONES-TF
Generalitat Valenciana https://doi.org/10.13039/501100003359 PROMETEOII%2F2014%2F044 Técnicas de Fabricación Avanzada y Control de Calidad de nuevos materiales multifuncionales en movilidad sostenible
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reserva de todos los derechos
http://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reserva de todos los derechos
http://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Springer-Verlag
publisher.none.fl_str_mv Springer-Verlag
dc.source.none.fl_str_mv reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname:Universitat Politècnica de València (UPV)
instname_str Universitat Politècnica de València (UPV)
reponame_str RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
collection RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301603

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