A transfer Hamiltonian model for devices based on quantum dot arrays

We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach....

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Detalles Bibliográficos
Autores: Illera Robles, Sergio, Prades García, Juan Daniel, Cirera Hernández, Albert, Cornet i Calveras, Albert
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2015
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/98866
Acceso en línea:https://hdl.handle.net/2445/98866
Access Level:acceso abierto
Palabra clave:Sistemes hamiltonians
Transport d'electrons
Teoria quàntica
Semiconductors
Hamiltonian systems
Electron transport
Quantum theory
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spelling A transfer Hamiltonian model for devices based on quantum dot arraysIllera Robles, SergioPrades García, Juan DanielCirera Hernández, AlbertCornet i Calveras, AlbertSistemes hamiltoniansTransport d'electronsTeoria quànticaSemiconductorsHamiltonian systemsElectron transportQuantum theorySemiconductorsWe present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide.Hindawi Publishing Corporation2016201620152016info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion14 p.application/pdfhttps://hdl.handle.net/2445/98866Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1155/2015/426541Scientific World Journal, 2015, vol. 2015http://dx.doi.org/10.1155/2015/426541info:eu-repo/grantAgreement/EC/FP7/info:eu-repo/grantAgreement/EC/FP7/1234cc-by (c) Illera Robles, Sergio et al., 2015http://creativecommons.org/licenses/by/3.0/esinfo:eu-repo/semantics/openAccessoai:recercat.cat:2445/988662026-05-29T05:05:01Z
dc.title.none.fl_str_mv A transfer Hamiltonian model for devices based on quantum dot arrays
title A transfer Hamiltonian model for devices based on quantum dot arrays
spellingShingle A transfer Hamiltonian model for devices based on quantum dot arrays
Illera Robles, Sergio
Sistemes hamiltonians
Transport d'electrons
Teoria quàntica
Semiconductors
Hamiltonian systems
Electron transport
Quantum theory
Semiconductors
title_short A transfer Hamiltonian model for devices based on quantum dot arrays
title_full A transfer Hamiltonian model for devices based on quantum dot arrays
title_fullStr A transfer Hamiltonian model for devices based on quantum dot arrays
title_full_unstemmed A transfer Hamiltonian model for devices based on quantum dot arrays
title_sort A transfer Hamiltonian model for devices based on quantum dot arrays
dc.creator.none.fl_str_mv Illera Robles, Sergio
Prades García, Juan Daniel
Cirera Hernández, Albert
Cornet i Calveras, Albert
author Illera Robles, Sergio
author_facet Illera Robles, Sergio
Prades García, Juan Daniel
Cirera Hernández, Albert
Cornet i Calveras, Albert
author_role author
author2 Prades García, Juan Daniel
Cirera Hernández, Albert
Cornet i Calveras, Albert
author2_role author
author
author
dc.subject.none.fl_str_mv Sistemes hamiltonians
Transport d'electrons
Teoria quàntica
Semiconductors
Hamiltonian systems
Electron transport
Quantum theory
Semiconductors
topic Sistemes hamiltonians
Transport d'electrons
Teoria quàntica
Semiconductors
Hamiltonian systems
Electron transport
Quantum theory
Semiconductors
description We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide.
publishDate 2015
dc.date.none.fl_str_mv 2015
2016
2016
2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/98866
url https://hdl.handle.net/2445/98866
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1155/2015/426541
Scientific World Journal, 2015, vol. 2015
http://dx.doi.org/10.1155/2015/426541
info:eu-repo/grantAgreement/EC/FP7/
info:eu-repo/grantAgreement/EC/FP7/1234
dc.rights.none.fl_str_mv cc-by (c) Illera Robles, Sergio et al., 2015
http://creativecommons.org/licenses/by/3.0/es
info:eu-repo/semantics/openAccess
rights_invalid_str_mv cc-by (c) Illera Robles, Sergio et al., 2015
http://creativecommons.org/licenses/by/3.0/es
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 14 p.
application/pdf
dc.publisher.none.fl_str_mv Hindawi Publishing Corporation
publisher.none.fl_str_mv Hindawi Publishing Corporation
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869412007074070528
score 15,81155

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