Efficient algorithm to compute the Berry conductivity
We propose and construct a numerical algorithm to calculate the Berry conductivity in topological band insulators. The method is applicable to cold atom systems as well as solid state setups, both for the insulating case where the Fermi energy lies in the gap between two bulk bands as well as in the...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2014 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/34022 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/34022 |
| Access Level: | acceso abierto |
| Palabra clave: | 53 HGTE quantum-wells Single dirac cone Topological insulators Hall conductance Magnetic-fields Surface Superlattices Realization Fermions Numbers. Física (Física) 22 Física |
| Sumario: | We propose and construct a numerical algorithm to calculate the Berry conductivity in topological band insulators. The method is applicable to cold atom systems as well as solid state setups, both for the insulating case where the Fermi energy lies in the gap between two bulk bands as well as in the metallic regime. This method interpolates smoothly between both regimes. The algorithm is gauge-invariant by construction, efficient, and yields the Berry conductivity with known and controllable statistical error bars. We apply the algorithm to several paradigmatic models in the field of topological insulators, including Haldaneʼs model on the honeycomb lattice, the multi-band Hofstadter model, and the BHZ model, which describes the 2D spin Hall effect observed in CdTe/HgTe/CdTe quantum well heterostructures. |
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