Stationary states and phase diagram for a model of the Gunn effect under realistic boundary conditions
A general formulation of boundary conditions for semiconductor-metal contacts follows from a phenomenological procedure sketched here. The resulting boundary conditions, which incorporate only physically well-defined parameters, are used to study the classical unipolar drift-diffusion model for the...
| Autores: | , , , |
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| Formato: | artículo |
| Fecha de publicación: | 1997 |
| País: | España |
| Recursos: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/16910 |
| Acesso em linha: | https://hdl.handle.net/2117/16910 |
| Access Level: | acceso abierto |
| Palavra-chave: | Phase transformations (Statistical physics) Equations of state Crystallography Statistical mechanics Soft condensed matter Transformacions de fase (Física estadística) Equacions d'estat Àrees temàtiques de la UPC::Física |
| Resumo: | A general formulation of boundary conditions for semiconductor-metal contacts follows from a phenomenological procedure sketched here. The resulting boundary conditions, which incorporate only physically well-defined parameters, are used to study the classical unipolar drift-diffusion model for the Gunn effect. The analysis of its stationary solutions reveals the presence of bistability and hysteresis for a certain range of contact parameters. Several types of Gunn effect are predicted to occur in the model, when no stable stationary solution exists, depending on the value of the parameters of the injecting contact appearing in the boundary condition. In this way, the critical role played by contacts in the Gunn effect is clearly stablished |
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