Structurally simplified GCMO crossbar design for artificial synaptic networks

[EN]Harnessing the full power of memristors as artificial synapses demands a simple and scalable crossbar architecture enabling their seamless integration into diverse applications. This letter presents the 3 × 3 memristor crossbar array configuration featuring a grid of interconnected devices. The...

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Detalles Bibliográficos
Autores: Antola, Anni, Angervo, Ilari, Huhtinen, Hannu, Miettinen, Mikko, Schulman, Alejandro, Paturi, Petriina
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2024
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/159307
Acceso en línea:http://hdl.handle.net/10366/159307
Access Level:acceso abierto
Palabra clave:Memristors
Perovskites
Resistive switching
Thin film devices
2203.02 Elementos de Circuitos
3307.09 Dispositivos Fotoeléctricos
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oai_identifier_str oai:gredos.usal.es:10366/159307
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repository_id_str
spelling Structurally simplified GCMO crossbar design for artificial synaptic networksAntola, AnniAngervo, IlariHuhtinen, HannuMiettinen, MikkoSchulman, AlejandroPaturi, PetriinaMemristorsPerovskitesResistive switchingThin film devices2203.02 Elementos de Circuitos3307.09 Dispositivos Fotoeléctricos[EN]Harnessing the full power of memristors as artificial synapses demands a simple and scalable crossbar architecture enabling their seamless integration into diverse applications. This letter presents the 3 × 3 memristor crossbar array configuration featuring a grid of interconnected devices. The composition includes Al as the reactive top electrode connecting the device columns and Gd1−xCaxMnO3 (GCMO, x = 0.8) serving as the bottom electrode connecting the device rows as well as the memristive material eliminating the need for additional layers and fabrication steps. Controlled sized vias through insulating Al2O3 layer connect the electrodes forming the active interface. The idea is validated with a test sample of 3 × 3 crossbars with Au/GCMO/Al structure, Au enabling Ohmic contact to GCMO, with device resistive switching ratios mostly around 102 and yield of over 90%. The devised crossbar structure could provide a highly scalable, yet simple, geometry suitable for synaptic networks.American Institute of Physics (Estados Unidos)202420242024info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttp://hdl.handle.net/10366/159307reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)InglésAttribution-NonCommercial-NoDerivatives 4.0 Internacionalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1593072026-06-07T06:28:51Z
dc.title.none.fl_str_mv Structurally simplified GCMO crossbar design for artificial synaptic networks
title Structurally simplified GCMO crossbar design for artificial synaptic networks
spellingShingle Structurally simplified GCMO crossbar design for artificial synaptic networks
Antola, Anni
Memristors
Perovskites
Resistive switching
Thin film devices
2203.02 Elementos de Circuitos
3307.09 Dispositivos Fotoeléctricos
title_short Structurally simplified GCMO crossbar design for artificial synaptic networks
title_full Structurally simplified GCMO crossbar design for artificial synaptic networks
title_fullStr Structurally simplified GCMO crossbar design for artificial synaptic networks
title_full_unstemmed Structurally simplified GCMO crossbar design for artificial synaptic networks
title_sort Structurally simplified GCMO crossbar design for artificial synaptic networks
dc.creator.none.fl_str_mv Antola, Anni
Angervo, Ilari
Huhtinen, Hannu
Miettinen, Mikko
Schulman, Alejandro
Paturi, Petriina
author Antola, Anni
author_facet Antola, Anni
Angervo, Ilari
Huhtinen, Hannu
Miettinen, Mikko
Schulman, Alejandro
Paturi, Petriina
author_role author
author2 Angervo, Ilari
Huhtinen, Hannu
Miettinen, Mikko
Schulman, Alejandro
Paturi, Petriina
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Memristors
Perovskites
Resistive switching
Thin film devices
2203.02 Elementos de Circuitos
3307.09 Dispositivos Fotoeléctricos
topic Memristors
Perovskites
Resistive switching
Thin film devices
2203.02 Elementos de Circuitos
3307.09 Dispositivos Fotoeléctricos
description [EN]Harnessing the full power of memristors as artificial synapses demands a simple and scalable crossbar architecture enabling their seamless integration into diverse applications. This letter presents the 3 × 3 memristor crossbar array configuration featuring a grid of interconnected devices. The composition includes Al as the reactive top electrode connecting the device columns and Gd1−xCaxMnO3 (GCMO, x = 0.8) serving as the bottom electrode connecting the device rows as well as the memristive material eliminating the need for additional layers and fabrication steps. Controlled sized vias through insulating Al2O3 layer connect the electrodes forming the active interface. The idea is validated with a test sample of 3 × 3 crossbars with Au/GCMO/Al structure, Au enabling Ohmic contact to GCMO, with device resistive switching ratios mostly around 102 and yield of over 90%. The devised crossbar structure could provide a highly scalable, yet simple, geometry suitable for synaptic networks.
publishDate 2024
dc.date.none.fl_str_mv 2024
2024
2024
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/159307
url http://hdl.handle.net/10366/159307
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv Attribution-NonCommercial-NoDerivatives 4.0 Internacional
http://creativecommons.org/licenses/by-nc-nd/4.0/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Attribution-NonCommercial-NoDerivatives 4.0 Internacional
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics (Estados Unidos)
publisher.none.fl_str_mv American Institute of Physics (Estados Unidos)
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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