An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors

The transport properties of a series of n- and p-type Si diodes have been studied by the Ion Beam Induced Charge (IBIC) technique using a 4 MeV proton microbeam. The samples were irradiated with 17 MeV protons at fluences ranging from 1x1012 to 1x1013 p/cm2 in order to produce a uniform profile of d...

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Detalles Bibliográficos
Autores: García López, Francisco Javier, Jiménez Ramos, María del Carmen, Rodríguez Ramos, Mauricio, Forneris, Jacopo, Ceballos, Joaquín
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2016
País:España
Institución:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:idus.us.es:11441/166771
Acceso en línea:https://hdl.handle.net/11441/166771
https://doi.org/10.1016/j.nimb.2015.09.012
Access Level:acceso abierto
Palabra clave:Drift-diffusion model
semiconductor detector
Ion beam induced charge
Monte Carlo method.
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spelling An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectorsGarcía López, Francisco JavierJiménez Ramos, María del CarmenRodríguez Ramos, MauricioForneris, JacopoCeballos, JoaquínDrift-diffusion modelsemiconductor detectorIon beam induced chargeMonte Carlo method.The transport properties of a series of n- and p-type Si diodes have been studied by the Ion Beam Induced Charge (IBIC) technique using a 4 MeV proton microbeam. The samples were irradiated with 17 MeV protons at fluences ranging from 1x1012 to 1x1013 p/cm2 in order to produce a uniform profile of defects with depth. The analysis of the charge collection efficiency (CCE) as a function of the reverse bias voltage has been carried out using an upgraded drift-diffusion (D-D) model which takes into account the possibility of carrier recombination not only in the neutral substrate, as the simple D-D model assumes, but also within the depletion region. This new approach for calculating the CCE is fundamental when the drift length of carriers cannot be considered as much greater that the thickness of the detector due to the ion induced damage. From our simulations, we have obtained the values of the carrier lifetimes for the pristine and irradiated diodes, which have allowed us to calculate the effective trapping cross sections using the one dimension Shockley-Read-Hall model. The results of our calculations have been compared to the data obtained using a recently developed Monte Carlo code for the simulation of IBIC analysis, based on the probabilistic interpretation of the excess carrier continuity equations.ElsevierFísica Aplicada IIFísica Atómica, Molecular y NuclearRNM138: Física Nuclear Aplicada2016info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/166771https://doi.org/10.1016/j.nimb.2015.09.012reponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 371, 294-297.https://www.sciencedirect.com/science/article/abs/pii/S0168583X15008411?via%3Dihubinfo:eu-repo/semantics/openAccessoai:idus.us.es:11441/1667712026-06-17T12:51:07Z
dc.title.none.fl_str_mv An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors
title An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors
spellingShingle An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors
García López, Francisco Javier
Drift-diffusion model
semiconductor detector
Ion beam induced charge
Monte Carlo method.
title_short An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors
title_full An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors
title_fullStr An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors
title_full_unstemmed An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors
title_sort An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors
dc.creator.none.fl_str_mv García López, Francisco Javier
Jiménez Ramos, María del Carmen
Rodríguez Ramos, Mauricio
Forneris, Jacopo
Ceballos, Joaquín
author García López, Francisco Javier
author_facet García López, Francisco Javier
Jiménez Ramos, María del Carmen
Rodríguez Ramos, Mauricio
Forneris, Jacopo
Ceballos, Joaquín
author_role author
author2 Jiménez Ramos, María del Carmen
Rodríguez Ramos, Mauricio
Forneris, Jacopo
Ceballos, Joaquín
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Física Aplicada II
Física Atómica, Molecular y Nuclear
RNM138: Física Nuclear Aplicada
dc.subject.none.fl_str_mv Drift-diffusion model
semiconductor detector
Ion beam induced charge
Monte Carlo method.
topic Drift-diffusion model
semiconductor detector
Ion beam induced charge
Monte Carlo method.
description The transport properties of a series of n- and p-type Si diodes have been studied by the Ion Beam Induced Charge (IBIC) technique using a 4 MeV proton microbeam. The samples were irradiated with 17 MeV protons at fluences ranging from 1x1012 to 1x1013 p/cm2 in order to produce a uniform profile of defects with depth. The analysis of the charge collection efficiency (CCE) as a function of the reverse bias voltage has been carried out using an upgraded drift-diffusion (D-D) model which takes into account the possibility of carrier recombination not only in the neutral substrate, as the simple D-D model assumes, but also within the depletion region. This new approach for calculating the CCE is fundamental when the drift length of carriers cannot be considered as much greater that the thickness of the detector due to the ion induced damage. From our simulations, we have obtained the values of the carrier lifetimes for the pristine and irradiated diodes, which have allowed us to calculate the effective trapping cross sections using the one dimension Shockley-Read-Hall model. The results of our calculations have been compared to the data obtained using a recently developed Monte Carlo code for the simulation of IBIC analysis, based on the probabilistic interpretation of the excess carrier continuity equations.
publishDate 2016
dc.date.none.fl_str_mv 2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/11441/166771
https://doi.org/10.1016/j.nimb.2015.09.012
url https://hdl.handle.net/11441/166771
https://doi.org/10.1016/j.nimb.2015.09.012
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 371, 294-297.
https://www.sciencedirect.com/science/article/abs/pii/S0168583X15008411?via%3Dihub
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:idUS. Depósito de Investigación de la Universidad de Sevilla
instname:Universidad de Sevilla (US)
instname_str Universidad de Sevilla (US)
reponame_str idUS. Depósito de Investigación de la Universidad de Sevilla
collection idUS. Depósito de Investigación de la Universidad de Sevilla
repository.name.fl_str_mv
repository.mail.fl_str_mv
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