Adsorption of atomic oxygen and nitrogen at β-cristobalite (100): a density functionaly theory study
The adsorption of atomic oxygen and nitrogen on the -cristobalite (100) surface is investigated from first principles density functional calculations within the generalized gradient approximation. A periodic SiO2 slab model (6 layers relaxing 4 or 6) ended with a layer of Si or O atoms is employed...
| Autores: | , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2005 |
| País: | España |
| Institución: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/164324 |
| Acceso en línea: | https://hdl.handle.net/2445/164324 |
| Access Level: | acceso abierto |
| Palabra clave: | Adsorció Teoria del funcional de densitat Quimiosorció Adsorption Density functionals Chemisorption |
| Sumario: | The adsorption of atomic oxygen and nitrogen on the -cristobalite (100) surface is investigated from first principles density functional calculations within the generalized gradient approximation. A periodic SiO2 slab model (6 layers relaxing 4 or 6) ended with a layer of Si or O atoms is employed throughout the study. Several adsorption minima and diffusion transition states have been characterized for the two lowest spin states of both systems. A strong chemisorption is found for either O or N in several sites with both slab endings (e.g., it is found an average adsorption energy of 5.89 eV for O (singlet state) and 4.12 eV for N (doublet state) over the Si face). The approach of O or N on top O gives place to the O2 and NO abstraction reactions without energy barriers. Atomic sticking coefficients and desorption rate constants have been estimated (300 - 1900 K) by using the standard transition state theory. The high adsorption energies found for O and N over silica point out that the atomic recombination processes (i.e., Eley-Rideal and Langmuir-Hinshelwood mechanisms) will play a more important role in the atomic detachment processes than the thermal desorption processes. Furthermore, the different behavior observed for the O and N thermal desorption processes suggests that the published kinetic models for atomic O and N recombination reactions on SiO2 surfaces, based on low adsorption energies (e.g., 3.5 eV for both O and N ), should probably be revised. |
|---|