Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour deposition

Hydrogenated amorphous and nanocrystalline silicon, deposited by catalytic chemical vapour deposition, have been doped during deposition by the addition of diborane and phosphine in the feed gas, with concentrations in the region of 1%. The crystalline fraction, dopant concentration and electrical p...

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Detalles Bibliográficos
Autores: Fonrodona Turon, Marta, Soler Vilamitjana, David, Bertomeu i Balagueró, Joan, Andreu i Batallé, Jordi
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2001
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/47379
Acceso en línea:https://hdl.handle.net/2445/47379
Access Level:acceso abierto
Palabra clave:Catàlisi
Deposició química en fase vapor
Silici
Nanocristalls
Catalysis
Chemical vapor deposition
Silicon
Nanocrystals
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spelling Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour depositionFonrodona Turon, MartaSoler Vilamitjana, DavidBertomeu i Balagueró, JoanAndreu i Batallé, JordiCatàlisiDeposició química en fase vaporSiliciNanocristallsCatalysisChemical vapor depositionSiliconNanocrystalsHydrogenated amorphous and nanocrystalline silicon, deposited by catalytic chemical vapour deposition, have been doped during deposition by the addition of diborane and phosphine in the feed gas, with concentrations in the region of 1%. The crystalline fraction, dopant concentration and electrical properties of the films are studied. The nanocrystalline films exhibited a high doping efficiency, both for n and p doping, and electrical characteristics similar to those of plasma-deposited films. The doping efficiency of n-type amorphous silicon is similar to that obtained for plasma-deposited electronic-grade amorphous silicon, whereas p-type layers show a doping efficiency of one order of magnitude lower. A higher deposition temperature of 450°C was required to achieve p-type films with electrical characteristics similar to those of plasma-deposited films.Elsevier B.V.2001info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://hdl.handle.net/2445/47379Articles publicats en revistes (Física Aplicada)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésVersió postprint del document publicat a: http://dx.doi.org/10.1016/S0040-6090(01)01230-5Thin Solid Films, 2001, vol. 395, num. 1-2, p. 125-129http://dx.doi.org/10.1016/S0040-6090(01)01230-5(c) Elsevier B.V., 2001info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/473792026-05-27T06:46:51Z
dc.title.none.fl_str_mv Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour deposition
title Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour deposition
spellingShingle Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour deposition
Fonrodona Turon, Marta
Catàlisi
Deposició química en fase vapor
Silici
Nanocristalls
Catalysis
Chemical vapor deposition
Silicon
Nanocrystals
title_short Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour deposition
title_full Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour deposition
title_fullStr Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour deposition
title_full_unstemmed Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour deposition
title_sort Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour deposition
dc.creator.none.fl_str_mv Fonrodona Turon, Marta
Soler Vilamitjana, David
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
author Fonrodona Turon, Marta
author_facet Fonrodona Turon, Marta
Soler Vilamitjana, David
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
author_role author
author2 Soler Vilamitjana, David
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
author2_role author
author
author
dc.subject.none.fl_str_mv Catàlisi
Deposició química en fase vapor
Silici
Nanocristalls
Catalysis
Chemical vapor deposition
Silicon
Nanocrystals
topic Catàlisi
Deposició química en fase vapor
Silici
Nanocristalls
Catalysis
Chemical vapor deposition
Silicon
Nanocrystals
description Hydrogenated amorphous and nanocrystalline silicon, deposited by catalytic chemical vapour deposition, have been doped during deposition by the addition of diborane and phosphine in the feed gas, with concentrations in the region of 1%. The crystalline fraction, dopant concentration and electrical properties of the films are studied. The nanocrystalline films exhibited a high doping efficiency, both for n and p doping, and electrical characteristics similar to those of plasma-deposited films. The doping efficiency of n-type amorphous silicon is similar to that obtained for plasma-deposited electronic-grade amorphous silicon, whereas p-type layers show a doping efficiency of one order of magnitude lower. A higher deposition temperature of 450°C was required to achieve p-type films with electrical characteristics similar to those of plasma-deposited films.
publishDate 2001
dc.date.none.fl_str_mv 2001
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/47379
url https://hdl.handle.net/2445/47379
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0040-6090(01)01230-5
Thin Solid Films, 2001, vol. 395, num. 1-2, p. 125-129
http://dx.doi.org/10.1016/S0040-6090(01)01230-5
dc.rights.none.fl_str_mv (c) Elsevier B.V., 2001
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Elsevier B.V., 2001
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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