Mg vacancy and impurity-limited MgO single crystal thermal conductivity
Magnesium oxide (MgO) exhibits one of the highest thermal conductivities among oxides and is widely used as a dielectric material and substrate in semiconductor devices, in refractory applications, and as a promising filler in thermal interface materials for electronics. Its high thermal conductivit...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Universidad de Zaragoza |
| Repositorio: | Zaguán. Repositorio Digital de la Universidad de Zaragoza |
| OAI Identifier: | oai:zaguan.unizar.es:168463 |
| Acceso en línea: | http://zaguan.unizar.es/record/168463 |
| Access Level: | acceso embargado |
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Mg vacancy and impurity-limited MgO single crystal thermal conductivityZhou, HaoWoo, HyunCarrete, JesúsHua, ZilongSaha, ShantanuJang, HyejinFeng, TianliMagnesium oxide (MgO) exhibits one of the highest thermal conductivities among oxides and is widely used as a dielectric material and substrate in semiconductor devices, in refractory applications, and as a promising filler in thermal interface materials for electronics. Its high thermal conductivity may be sensitive to impurity and defects, yet this influence is still uncertain. Here, the impact of the common impurities, i.e., Al, Ca, Ti, V, Fe, Si, B, Nb, Zr, Na, and K, as well as Mg and O vacancies on phonon scattering and thermal conductivity of MgO is studied using a fully first-principles T-matrix framework. It is found that B, Nb, and Zr impurities, along with Mg vacancies, lead to exceptionally strong reductions in thermal conductivity. By contrast, O vacancies and other impurities have modest to minimal impacts. Leveraging the T-matrix results, we reassess the perturbative, mass-only formalism whose use is pervasive in the literature and show that neglecting bond disorder does not necessarily lead to underestimation: for all transition-metal impurities studied, bond perturbations partially cancel mass disorder, causing the traditional perturbative model to overestimate scattering. We propose a simple modified perturbative expression that incorporates both mass and bond disorder and closely reproduces the T-matrix trends. Our predicted low-temperature trends by including phonon-impurity and phonon-boundary scattering match reasonably well with experiments. This work provides an in-depth study of impurity- and vacancy-limited thermal conductivity of MgO and suggests that reported “high-purity” MgO values have likely not yet reached the intrinsic upper limit, which may be substantially higher.2025info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttp://zaguan.unizar.es/record/168463reponame:Zaguán. Repositorio Digital de la Universidad de Zaragozainstname:Universidad de ZaragozaInglésinfo:eu-repo/grantAgreement/ES/MCIU/PID2023-148359NB-C21info:eu-repo/grantAgreement/ES/MICIU/CEX2023-001286-Sinfo:eu-repo/semantics/embargoedAccessoai:zaguan.unizar.es:1684632026-05-29T13:59:51Z |
| dc.title.none.fl_str_mv |
Mg vacancy and impurity-limited MgO single crystal thermal conductivity |
| title |
Mg vacancy and impurity-limited MgO single crystal thermal conductivity |
| spellingShingle |
Mg vacancy and impurity-limited MgO single crystal thermal conductivity Zhou, Hao |
| title_short |
Mg vacancy and impurity-limited MgO single crystal thermal conductivity |
| title_full |
Mg vacancy and impurity-limited MgO single crystal thermal conductivity |
| title_fullStr |
Mg vacancy and impurity-limited MgO single crystal thermal conductivity |
| title_full_unstemmed |
Mg vacancy and impurity-limited MgO single crystal thermal conductivity |
| title_sort |
Mg vacancy and impurity-limited MgO single crystal thermal conductivity |
| dc.creator.none.fl_str_mv |
Zhou, Hao Woo, Hyun Carrete, Jesús Hua, Zilong Saha, Shantanu Jang, Hyejin Feng, Tianli |
| author |
Zhou, Hao |
| author_facet |
Zhou, Hao Woo, Hyun Carrete, Jesús Hua, Zilong Saha, Shantanu Jang, Hyejin Feng, Tianli |
| author_role |
author |
| author2 |
Woo, Hyun Carrete, Jesús Hua, Zilong Saha, Shantanu Jang, Hyejin Feng, Tianli |
| author2_role |
author author author author author author |
| description |
Magnesium oxide (MgO) exhibits one of the highest thermal conductivities among oxides and is widely used as a dielectric material and substrate in semiconductor devices, in refractory applications, and as a promising filler in thermal interface materials for electronics. Its high thermal conductivity may be sensitive to impurity and defects, yet this influence is still uncertain. Here, the impact of the common impurities, i.e., Al, Ca, Ti, V, Fe, Si, B, Nb, Zr, Na, and K, as well as Mg and O vacancies on phonon scattering and thermal conductivity of MgO is studied using a fully first-principles T-matrix framework. It is found that B, Nb, and Zr impurities, along with Mg vacancies, lead to exceptionally strong reductions in thermal conductivity. By contrast, O vacancies and other impurities have modest to minimal impacts. Leveraging the T-matrix results, we reassess the perturbative, mass-only formalism whose use is pervasive in the literature and show that neglecting bond disorder does not necessarily lead to underestimation: for all transition-metal impurities studied, bond perturbations partially cancel mass disorder, causing the traditional perturbative model to overestimate scattering. We propose a simple modified perturbative expression that incorporates both mass and bond disorder and closely reproduces the T-matrix trends. Our predicted low-temperature trends by including phonon-impurity and phonon-boundary scattering match reasonably well with experiments. This work provides an in-depth study of impurity- and vacancy-limited thermal conductivity of MgO and suggests that reported “high-purity” MgO values have likely not yet reached the intrinsic upper limit, which may be substantially higher. |
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2025 |
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2025 |
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info:eu-repo/grantAgreement/ES/MCIU/PID2023-148359NB-C21 info:eu-repo/grantAgreement/ES/MICIU/CEX2023-001286-S |
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