Watt-level green random laser at 532 nm by SHG of Yb-doped fiber laser
We have developed a Watt-level random laser at 532 nm. The laser is based on a 1064 nm random distributed ytterbium-gain assisted fiber laser seed with a 0.35 nm line-width and 900 mW polarized output power. A study for the optimal length of the random distributed mirror was carried out. An ytterbiu...
| Autores: | , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universidad Pública de Navarra |
| Repositorio: | Academica-e. Repositorio Institucional de la Universidad Pública de Navarra |
| OAI Identifier: | oai:academica-e.unavarra.es:2454/34833 |
| Acceso en línea: | https://hdl.handle.net/2454/34833 |
| Access Level: | acceso abierto |
| Palabra clave: | Fiber laser Distributed feedback lasers Frequency doubled lasers Ytterbium lasers Laser amplifiers Visible lasers |
| Sumario: | We have developed a Watt-level random laser at 532 nm. The laser is based on a 1064 nm random distributed ytterbium-gain assisted fiber laser seed with a 0.35 nm line-width and 900 mW polarized output power. A study for the optimal length of the random distributed mirror was carried out. An ytterbium-doped fiber master oscillator power amplifier architecture is used to amplify the random seeder laser without additional spectral broadening up to 20 W. By using a periodically poled lithium niobate(PPLN) crystal in a single pass configuration we generate in excess of 1 W random laser at 532 nm by second harmonic generation with an efficiency of 9%. The green random laser exhibits an instability <1%, optical signal to noise ratio >70 dB, 0.1 nm linewidth and excellent beam quality. |
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