Watt-level green random laser at 532  nm by SHG of Yb-doped fiber laser

We have developed a Watt-level random laser at 532 nm. The laser is based on a 1064 nm random distributed ytterbium-gain assisted fiber laser seed with a 0.35 nm line-width and 900 mW polarized output power. A study for the optimal length of the random distributed mirror was carried out. An ytterbiu...

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Detalles Bibliográficos
Autores: Rota Rodrigo, Sergio, Gouhier, B., Dixneuf, C., Antoni Micollier, L., Guiraud, G., Leandro González, Daniel, López-Amo Sáinz, Manuel, Traynor, N., Santarelli, Giorgio
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2018
País:España
Institución:Universidad Pública de Navarra
Repositorio:Academica-e. Repositorio Institucional de la Universidad Pública de Navarra
OAI Identifier:oai:academica-e.unavarra.es:2454/34833
Acceso en línea:https://hdl.handle.net/2454/34833
Access Level:acceso abierto
Palabra clave:Fiber laser
Distributed feedback lasers
Frequency doubled lasers
Ytterbium lasers
Laser amplifiers
Visible lasers
Descripción
Sumario:We have developed a Watt-level random laser at 532 nm. The laser is based on a 1064 nm random distributed ytterbium-gain assisted fiber laser seed with a 0.35 nm line-width and 900 mW polarized output power. A study for the optimal length of the random distributed mirror was carried out. An ytterbium-doped fiber master oscillator power amplifier architecture is used to amplify the random seeder laser without additional spectral broadening up to 20 W. By using a periodically poled lithium niobate(PPLN) crystal in a single pass configuration we generate in excess of 1 W random laser at 532 nm by second harmonic generation with an efficiency of 9%. The green random laser exhibits an instability <1%, optical signal to noise ratio >70 dB, 0.1 nm linewidth and excellent beam quality.