High-Responsivity Ultraviolet Photodetectors With Enhancement of Optical Absorption Using Graphene Components and Al2O3 Layer on Si Substrate

We report on high-responsivity photodetector (PD) designs with Si substrate, Ag layer, graphene (Gr) components, and Al2O3 layer through enhancement of ultraviolet (UV) light absorption. The finite-difference time-domain (FDTD) method is used for PD simulation under normal incidence of UV radiation....

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Autores: Jangra R., Mishra S.K., Sharma A.K.
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2024
País:España
Recursos:Centre Tecnològic de Telecomunicacions de Catalunya (CTTC)
Repositorio:r-CTTC. Repositorio Institucional Producción Científica del Centre Tecnològic de Telecomunicacions de Catalunya (CTTC)
OAI Identifier:oai:cttc.fundanetsuite.com:p8378
Acesso em linha:https://cttc.fundanetsuite.com/Publicaciones/ProdCientif/PublicacionFrw.aspx?id=8378
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85182382743&doi=10.1109%2fJSEN.2023.3347702&partnerID=40&md5=e7df6b997c4edb2ae48228b5f1d34c71
Access Level:acceso abierto
Palavra-chave:Aluminum
Finite difference time domain method
Graphene
Light absorption
Photons
Quantum efficiency
Silicon
Substrates
Ag layers
Photodetector design
Reduced graphene oxides
Responsivity
Si substrates
Sub-layers
Ultra-violet photodetectors
Ultraviolet
Ultraviolet light absorption
Wavelength ranges
Photodetectors
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spelling High-Responsivity Ultraviolet Photodetectors With Enhancement of Optical Absorption Using Graphene Components and Al2O3 Layer on Si SubstrateJangra R.Mishra S.K.Sharma A.K.AluminumFinite difference time domain methodGrapheneLight absorptionPhotonsQuantum efficiencySiliconSubstratesAg layersPhotodetector designReduced graphene oxidesResponsivitySi substratesSub-layersUltra-violet photodetectorsUltravioletUltraviolet light absorptionWavelength rangesPhotodetectorsWe report on high-responsivity photodetector (PD) designs with Si substrate, Ag layer, graphene (Gr) components, and Al2O3 layer through enhancement of ultraviolet (UV) light absorption. The finite-difference time-domain (FDTD) method is used for PD simulation under normal incidence of UV radiation. The results indicate that with Si-Ag-Gr PD design, an Al2O3 layer (15-nm thick) considerably increases the absorption causing greater magnitudes of quantum efficiency (?) and responsivity (?) in the ultraviolet B (UVB) region (wavelength range: 280-320 nm). In terms of magnitudes, the Si-Ag-Gr-Al2O3 (15 nm) PD design operating at 296.06-nm wavelength (?0) achieves ? and ? as large as 0.628 and 0.149 A/W, respectively. At ?0 = 296.06 nm, the magnitude of photocurrent (Ip) is 64 µA and the UV-to-visible rejection ratio (Rr) is 0.4× 102. Furthermore, the use of reduced graphene oxide (rGO) is explored to operate the PD in the ultraviolet A (UVA) region (wavelength range: 320-370 nm) with equally high performance. The simulation results indicate that Si-Ag-rGO-Al2O3 (1 nm) PD design operating at 336.86-nm wavelength provides ? and ? as large as 0.586 and 0.159 A/W, respectively. At ?0 = 336.86 nm, the magnitude of Ip is 68.23 µA and Rr is 0.26×102 for this PD. These UVA- and UVB-specific PD designs (particularly, Gr-based with 99.6% absorption in the UVB region) possess exceptionally large magnitudes of absorbance, which is an indicator of the perfect absorber behavior of the proposed multilayer designs. The proposed PD design can provide superior responsivity compared to recently reported UV PDs. © 2001-2012 IEEE.Institute of Electrical and Electronics Engineers Inc.2024info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttps://cttc.fundanetsuite.com/Publicaciones/ProdCientif/PublicacionFrw.aspx?id=8378https://www.scopus.com/inward/record.uri?eid=2-s2.0-85182382743&doi=10.1109%2fJSEN.2023.3347702&partnerID=40&md5=e7df6b997c4edb2ae48228b5f1d34c71IEEE SENSORS JOURNALISSN: 1530437XISSNe: 15581748reponame:r-CTTC. Repositorio Institucional Producción Científica del Centre Tecnològic de Telecomunicacions de Catalunya (CTTC)instname:Centre Tecnològic de Telecomunicacions de Catalunya (CTTC)Inglésinfo:eu-repo/semantics/openAccessoai:cttc.fundanetsuite.com:p83782026-06-17T11:44:47Z
dc.title.none.fl_str_mv High-Responsivity Ultraviolet Photodetectors With Enhancement of Optical Absorption Using Graphene Components and Al2O3 Layer on Si Substrate
title High-Responsivity Ultraviolet Photodetectors With Enhancement of Optical Absorption Using Graphene Components and Al2O3 Layer on Si Substrate
spellingShingle High-Responsivity Ultraviolet Photodetectors With Enhancement of Optical Absorption Using Graphene Components and Al2O3 Layer on Si Substrate
Jangra R.
Aluminum
Finite difference time domain method
Graphene
Light absorption
Photons
Quantum efficiency
Silicon
Substrates
Ag layers
Photodetector design
Reduced graphene oxides
Responsivity
Si substrates
Sub-layers
Ultra-violet photodetectors
Ultraviolet
Ultraviolet light absorption
Wavelength ranges
Photodetectors
title_short High-Responsivity Ultraviolet Photodetectors With Enhancement of Optical Absorption Using Graphene Components and Al2O3 Layer on Si Substrate
title_full High-Responsivity Ultraviolet Photodetectors With Enhancement of Optical Absorption Using Graphene Components and Al2O3 Layer on Si Substrate
title_fullStr High-Responsivity Ultraviolet Photodetectors With Enhancement of Optical Absorption Using Graphene Components and Al2O3 Layer on Si Substrate
title_full_unstemmed High-Responsivity Ultraviolet Photodetectors With Enhancement of Optical Absorption Using Graphene Components and Al2O3 Layer on Si Substrate
title_sort High-Responsivity Ultraviolet Photodetectors With Enhancement of Optical Absorption Using Graphene Components and Al2O3 Layer on Si Substrate
dc.creator.none.fl_str_mv Jangra R.
Mishra S.K.
Sharma A.K.
author Jangra R.
author_facet Jangra R.
Mishra S.K.
Sharma A.K.
author_role author
author2 Mishra S.K.
Sharma A.K.
author2_role author
author
dc.subject.none.fl_str_mv Aluminum
Finite difference time domain method
Graphene
Light absorption
Photons
Quantum efficiency
Silicon
Substrates
Ag layers
Photodetector design
Reduced graphene oxides
Responsivity
Si substrates
Sub-layers
Ultra-violet photodetectors
Ultraviolet
Ultraviolet light absorption
Wavelength ranges
Photodetectors
topic Aluminum
Finite difference time domain method
Graphene
Light absorption
Photons
Quantum efficiency
Silicon
Substrates
Ag layers
Photodetector design
Reduced graphene oxides
Responsivity
Si substrates
Sub-layers
Ultra-violet photodetectors
Ultraviolet
Ultraviolet light absorption
Wavelength ranges
Photodetectors
description We report on high-responsivity photodetector (PD) designs with Si substrate, Ag layer, graphene (Gr) components, and Al2O3 layer through enhancement of ultraviolet (UV) light absorption. The finite-difference time-domain (FDTD) method is used for PD simulation under normal incidence of UV radiation. The results indicate that with Si-Ag-Gr PD design, an Al2O3 layer (15-nm thick) considerably increases the absorption causing greater magnitudes of quantum efficiency (?) and responsivity (?) in the ultraviolet B (UVB) region (wavelength range: 280-320 nm). In terms of magnitudes, the Si-Ag-Gr-Al2O3 (15 nm) PD design operating at 296.06-nm wavelength (?0) achieves ? and ? as large as 0.628 and 0.149 A/W, respectively. At ?0 = 296.06 nm, the magnitude of photocurrent (Ip) is 64 µA and the UV-to-visible rejection ratio (Rr) is 0.4× 102. Furthermore, the use of reduced graphene oxide (rGO) is explored to operate the PD in the ultraviolet A (UVA) region (wavelength range: 320-370 nm) with equally high performance. The simulation results indicate that Si-Ag-rGO-Al2O3 (1 nm) PD design operating at 336.86-nm wavelength provides ? and ? as large as 0.586 and 0.159 A/W, respectively. At ?0 = 336.86 nm, the magnitude of Ip is 68.23 µA and Rr is 0.26×102 for this PD. These UVA- and UVB-specific PD designs (particularly, Gr-based with 99.6% absorption in the UVB region) possess exceptionally large magnitudes of absorbance, which is an indicator of the perfect absorber behavior of the proposed multilayer designs. The proposed PD design can provide superior responsivity compared to recently reported UV PDs. © 2001-2012 IEEE.
publishDate 2024
dc.date.none.fl_str_mv 2024
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://cttc.fundanetsuite.com/Publicaciones/ProdCientif/PublicacionFrw.aspx?id=8378
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85182382743&doi=10.1109%2fJSEN.2023.3347702&partnerID=40&md5=e7df6b997c4edb2ae48228b5f1d34c71
url https://cttc.fundanetsuite.com/Publicaciones/ProdCientif/PublicacionFrw.aspx?id=8378
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85182382743&doi=10.1109%2fJSEN.2023.3347702&partnerID=40&md5=e7df6b997c4edb2ae48228b5f1d34c71
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers Inc.
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers Inc.
dc.source.none.fl_str_mv IEEE SENSORS JOURNAL
ISSN: 1530437X
ISSNe: 15581748
reponame:r-CTTC. Repositorio Institucional Producción Científica del Centre Tecnològic de Telecomunicacions de Catalunya (CTTC)
instname:Centre Tecnològic de Telecomunicacions de Catalunya (CTTC)
instname_str Centre Tecnològic de Telecomunicacions de Catalunya (CTTC)
reponame_str r-CTTC. Repositorio Institucional Producción Científica del Centre Tecnològic de Telecomunicacions de Catalunya (CTTC)
collection r-CTTC. Repositorio Institucional Producción Científica del Centre Tecnològic de Telecomunicacions de Catalunya (CTTC)
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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