Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron-Style Models

[EN] Halide perovskites are at the forefront of active research in many applications, such as high performance solar cells, photodetectors, and synapses and neurons for neuromorphic computation. As a result of ion transport and ionic-electronic interactions, current and recombination are influenced...

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Autor: Bisquert, Juan|||0000-0003-4987-4887
Tipo de recurso: artículo
Fecha de publicación:2024
País:España
Institución:Universitat Politècnica de València (UPV)
Repositorio:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
Idioma:inglés
OAI Identifier:oai:riunet.upv.es:10251/205680
Acceso en línea:https://riunet.upv.es/handle/10251/205680
Access Level:acceso abierto
Palabra clave:Hysteresis
Impedance, Memory devices
Transients effects
Perovskite solar cells
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spelling Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron-Style ModelsBisquert, Juan|||0000-0003-4987-4887HysteresisImpedance, Memory devicesTransients effectsPerovskite solar cells[EN] Halide perovskites are at the forefront of active research in many applications, such as high performance solar cells, photodetectors, and synapses and neurons for neuromorphic computation. As a result of ion transport and ionic-electronic interactions, current and recombination are influenced by delay and memory effects that cause hysteresis of current¿voltage curves and long switching times. A methodology to formulate device models is shown, in which the conduction and recombination electronic variables are influenced by internal state variables. The models are inspired in biological frameworks of the Hodgkin¿Huxley class of models. Here, the theoretical precedents, the main physical components of the models, and their application to describe dynamical measurements in halide perovskite devices are summarized. The application of several measurement methods is analyzed, as the current¿voltage curves at different scan rates, the impedance spectroscopy response, and the time transients. The transition from normal (capacitive) to inverted (inductive) hysteresis, and the convergence of current¿voltage curves to a stable value, are described. It is proposed that neuron-style models capture dynamical complexity with a favorable economy of parameters, toward the identification of the dominant global dynamic processes across a wide voltage span that determines the practical response of different types of devices.This work was funded by the European Research Council (ERC) via Horizon Europe Advanced Grant, grant agreement no. 101097688 ("PeroSpiker").John Wiley & SonsInstituto Universitario Mixto de Tecnología QuímicaEuropean Research CouncilRepositorio Institucional de la Universitat Politècnica de València Riunet20242024-07-01journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://riunet.upv.es/handle/10251/205680reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valénciainstname:Universitat Politècnica de València (UPV)InglésengEuropean Commission https://doi.org/10.13039/501100000780 HE 101097688 Perovskite Spiking Neurons for Intelligent NetworksEuropean Research Council https://doi.org/10.13039/501100000781 20240401 Perovskite Spiking Neurons for Intelligent Networksopen accesshttp://purl.org/coar/access_right/c_abf2Reserva de todos los derechoshttp://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:riunet.upv.es:10251/2056802026-06-13T07:49:27Z
dc.title.none.fl_str_mv Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron-Style Models
title Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron-Style Models
spellingShingle Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron-Style Models
Bisquert, Juan|||0000-0003-4987-4887
Hysteresis
Impedance, Memory devices
Transients effects
Perovskite solar cells
title_short Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron-Style Models
title_full Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron-Style Models
title_fullStr Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron-Style Models
title_full_unstemmed Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron-Style Models
title_sort Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron-Style Models
dc.creator.none.fl_str_mv Bisquert, Juan|||0000-0003-4987-4887
author Bisquert, Juan|||0000-0003-4987-4887
author_facet Bisquert, Juan|||0000-0003-4987-4887
author_role author
dc.contributor.none.fl_str_mv Instituto Universitario Mixto de Tecnología Química
European Research Council
Repositorio Institucional de la Universitat Politècnica de València Riunet
dc.subject.none.fl_str_mv Hysteresis
Impedance, Memory devices
Transients effects
Perovskite solar cells
topic Hysteresis
Impedance, Memory devices
Transients effects
Perovskite solar cells
description [EN] Halide perovskites are at the forefront of active research in many applications, such as high performance solar cells, photodetectors, and synapses and neurons for neuromorphic computation. As a result of ion transport and ionic-electronic interactions, current and recombination are influenced by delay and memory effects that cause hysteresis of current¿voltage curves and long switching times. A methodology to formulate device models is shown, in which the conduction and recombination electronic variables are influenced by internal state variables. The models are inspired in biological frameworks of the Hodgkin¿Huxley class of models. Here, the theoretical precedents, the main physical components of the models, and their application to describe dynamical measurements in halide perovskite devices are summarized. The application of several measurement methods is analyzed, as the current¿voltage curves at different scan rates, the impedance spectroscopy response, and the time transients. The transition from normal (capacitive) to inverted (inductive) hysteresis, and the convergence of current¿voltage curves to a stable value, are described. It is proposed that neuron-style models capture dynamical complexity with a favorable economy of parameters, toward the identification of the dominant global dynamic processes across a wide voltage span that determines the practical response of different types of devices.
publishDate 2024
dc.date.none.fl_str_mv 2024
2024-07-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://riunet.upv.es/handle/10251/205680
url https://riunet.upv.es/handle/10251/205680
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv European Commission https://doi.org/10.13039/501100000780 HE 101097688 Perovskite Spiking Neurons for Intelligent Networks
European Research Council https://doi.org/10.13039/501100000781 20240401 Perovskite Spiking Neurons for Intelligent Networks
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reserva de todos los derechos
http://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reserva de todos los derechos
http://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv John Wiley & Sons
publisher.none.fl_str_mv John Wiley & Sons
dc.source.none.fl_str_mv reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname:Universitat Politècnica de València (UPV)
instname_str Universitat Politècnica de València (UPV)
reponame_str RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
collection RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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