Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures

Blue green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high ener...

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Autores: Berencén Ramírez, Yonder Antonio, Jambois, Olivier, Ramírez Ramírez, Joan Manel, Rebled, J. M. (José Manuel), Estradé Albiol, Sònia, Peiró Martínez, Francisca, Domínguez, Carlos (Domínguez Horna), Rodríguez, J. A., Garrido Fernández, Blas
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2011
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/32211
Acceso en línea:https://hdl.handle.net/2445/32211
Access Level:acceso abierto
Palabra clave:Microelectrònica
Metall-òxid-semiconductors
Luminescència
Optoelectrònica
Microelectronics
Metal oxide semiconductors
Luminescence
Optoelectronics
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spelling Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structuresBerencén Ramírez, Yonder AntonioJambois, OlivierRamírez Ramírez, Joan ManelRebled, J. M. (José Manuel)Estradé Albiol, SòniaPeiró Martínez, FranciscaDomínguez, Carlos (Domínguez Horna)Rodríguez, J. A.Garrido Fernández, BlasMicroelectrònicaMetall-òxid-semiconductorsLuminescènciaOptoelectrònicaMicroelectronicsMetal oxide semiconductorsLuminescenceOptoelectronicsBlue green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 °C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO2 layer. Charge transport analysis is reported and allows for identifying the origin of this twowavelength switching effect.Optical Society of America2012201220112012info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion3 p.application/pdfhttps://hdl.handle.net/2445/32211Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1364/OL.36.002617Optics Letters, 2011, vol. 36, num. 14, p. 2617-2619http://dx.doi.org/10.1364/OL.36.002617(c) Optical Society of America, 2011info:eu-repo/semantics/openAccessoai:recercat.cat:2445/322112026-05-29T05:05:01Z
dc.title.none.fl_str_mv Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures
title Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures
spellingShingle Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures
Berencén Ramírez, Yonder Antonio
Microelectrònica
Metall-òxid-semiconductors
Luminescència
Optoelectrònica
Microelectronics
Metal oxide semiconductors
Luminescence
Optoelectronics
title_short Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures
title_full Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures
title_fullStr Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures
title_full_unstemmed Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures
title_sort Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures
dc.creator.none.fl_str_mv Berencén Ramírez, Yonder Antonio
Jambois, Olivier
Ramírez Ramírez, Joan Manel
Rebled, J. M. (José Manuel)
Estradé Albiol, Sònia
Peiró Martínez, Francisca
Domínguez, Carlos (Domínguez Horna)
Rodríguez, J. A.
Garrido Fernández, Blas
author Berencén Ramírez, Yonder Antonio
author_facet Berencén Ramírez, Yonder Antonio
Jambois, Olivier
Ramírez Ramírez, Joan Manel
Rebled, J. M. (José Manuel)
Estradé Albiol, Sònia
Peiró Martínez, Francisca
Domínguez, Carlos (Domínguez Horna)
Rodríguez, J. A.
Garrido Fernández, Blas
author_role author
author2 Jambois, Olivier
Ramírez Ramírez, Joan Manel
Rebled, J. M. (José Manuel)
Estradé Albiol, Sònia
Peiró Martínez, Francisca
Domínguez, Carlos (Domínguez Horna)
Rodríguez, J. A.
Garrido Fernández, Blas
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Microelectrònica
Metall-òxid-semiconductors
Luminescència
Optoelectrònica
Microelectronics
Metal oxide semiconductors
Luminescence
Optoelectronics
topic Microelectrònica
Metall-òxid-semiconductors
Luminescència
Optoelectrònica
Microelectronics
Metal oxide semiconductors
Luminescence
Optoelectronics
description Blue green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 °C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO2 layer. Charge transport analysis is reported and allows for identifying the origin of this twowavelength switching effect.
publishDate 2011
dc.date.none.fl_str_mv 2011
2012
2012
2012
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/32211
url https://hdl.handle.net/2445/32211
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1364/OL.36.002617
Optics Letters, 2011, vol. 36, num. 14, p. 2617-2619
http://dx.doi.org/10.1364/OL.36.002617
dc.rights.none.fl_str_mv (c) Optical Society of America, 2011
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Optical Society of America, 2011
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 3 p.
application/pdf
dc.publisher.none.fl_str_mv Optical Society of America
publisher.none.fl_str_mv Optical Society of America
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,81155

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