Toward high-fidelity quantum information processing and quantum simulation with spin qubits and phonons
We analyze the implementation of high-fidelity, phonon-mediated gate operations and quantum simulation schemes for spin qubits associated with silicon vacancy centers in diamond. Specifically, we show how the application of continuous dynamical decoupling techniques can substantially boost the coher...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión enviada para evaluación y publicación |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/414905 |
| Acceso en línea: | http://hdl.handle.net/10261/414905 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85198563780&doi=10.1103%2FPhysRevB.110.045419&partnerID=40&md5=333eb2a787b7a53a3d264ac754985181 |
| Access Level: | acceso abierto |
| Palabra clave: | Quantum chemistry Quantum optics Qubits Decoupling technique Dynamical decoupling Gate operation High-fidelity Operations simulation Processing simulation Quantum information processing Quantum simulations Silicon vacancies Spin qubit Phonons |
| Sumario: | We analyze the implementation of high-fidelity, phonon-mediated gate operations and quantum simulation schemes for spin qubits associated with silicon vacancy centers in diamond. Specifically, we show how the application of continuous dynamical decoupling techniques can substantially boost the coherence of the qubit states while increasing at the same time the variety of effective spin models that can be implemented in this way. Based on realistic models and detailed numerical simulations, we demonstrate that this decoupling technique can suppress gate errors by more than two orders of magnitude and enable gate infidelities below ∼10-4 for experimentally relevant noise parameters. Therefore, when generalized to phononic lattices with arrays of implanted defect centers, this approach offers a realistic path toward moderate- and large-scale quantum devices with spins and phonons at a level of control that is competitive with other leading quantum-technology platforms. © 2024 American Physical Society. |
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