Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor

Silicon nanowires present outstanding properties for electronics, energy, and environmental monitoring applications. However, their integration into microelectromechanical systems (MEMS) is a major issue so far due to low compatibility with mainstream technology, which complicates patterning and con...

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Detalles Bibliográficos
Autores: Gadea, G, Morata, A, Santos, J D, Dávila, Diana, Calaza, Carlos, Salleras, Marc, Fonseca, Luis, Tarancón, Albert
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2015
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/415953
Acceso en línea:http://hdl.handle.net/10261/415953
https://api.elsevier.com/content/abstract/scopus_id/84928572010
Access Level:acceso abierto
Palabra clave:aligned
gold
integration
nanowires
silane
silicon
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
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spelling Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursorGadea, GMorata, ASantos, J DDávila, DianaCalaza, CarlosSalleras, MarcFonseca, LuisTarancón, Albertalignedgoldintegrationnanowiressilanesiliconhttp://metadata.un.org/sdg/9Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovationSilicon nanowires present outstanding properties for electronics, energy, and environmental monitoring applications. However, their integration into microelectromechanical systems (MEMS) is a major issue so far due to low compatibility with mainstream technology, which complicates patterning and controlled morphology. This work addresses the growth of 〈111〉 aligned silicon nanowire arrays fully integrated into standard MEMS processing by means of the chemical vapor deposition-vapor liquid solid method (CVD-VLS) using silane as a precursor. A reinterpretation of the galvanic displacement method is presented for selectively depositing gold nanoparticles of controlled size and shape. Moreover, a comprehensive analysis of the effects of synthesis temperature and pressure on the growth rate and alignment of nanowires is presented for the most common silicon precursor, i.e., silane. Compared with previously reported protocols, the redefined galvanic displacement together with a silane-based CVD-VLS growth methodology provides a more standard and low-temperature (<650 °C) synthesis scheme and a compatible route to reliably grow Si nanowires in MEMS for advanced applications.This work was financially supported by the 7th Framework program under the project SiNERGY (FP7-NMP-SMALL-2013-604169) and by the European Regional Development Funds (ERDF, FEDER Programa 2007–2013 Competitivitat de Catalunya).Peer reviewedIOP PublishingEuropean CommissionConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202620262015info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/415953https://api.elsevier.com/content/abstract/scopus_id/84928572010reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/EC/FP7-NMP-SMALL-2013-604169/Nanotechnologyhttps://iopscience.iop.org/article/10.1088/0957-4484/26/19/195302Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/4159532026-05-22T06:33:51Z
dc.title.none.fl_str_mv Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor
title Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor
spellingShingle Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor
Gadea, G
aligned
gold
integration
nanowires
silane
silicon
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
title_short Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor
title_full Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor
title_fullStr Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor
title_full_unstemmed Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor
title_sort Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor
dc.creator.none.fl_str_mv Gadea, G
Morata, A
Santos, J D
Dávila, Diana
Calaza, Carlos
Salleras, Marc
Fonseca, Luis
Tarancón, Albert
author Gadea, G
author_facet Gadea, G
Morata, A
Santos, J D
Dávila, Diana
Calaza, Carlos
Salleras, Marc
Fonseca, Luis
Tarancón, Albert
author_role author
author2 Morata, A
Santos, J D
Dávila, Diana
Calaza, Carlos
Salleras, Marc
Fonseca, Luis
Tarancón, Albert
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv European Commission
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv aligned
gold
integration
nanowires
silane
silicon
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
topic aligned
gold
integration
nanowires
silane
silicon
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
description Silicon nanowires present outstanding properties for electronics, energy, and environmental monitoring applications. However, their integration into microelectromechanical systems (MEMS) is a major issue so far due to low compatibility with mainstream technology, which complicates patterning and controlled morphology. This work addresses the growth of 〈111〉 aligned silicon nanowire arrays fully integrated into standard MEMS processing by means of the chemical vapor deposition-vapor liquid solid method (CVD-VLS) using silane as a precursor. A reinterpretation of the galvanic displacement method is presented for selectively depositing gold nanoparticles of controlled size and shape. Moreover, a comprehensive analysis of the effects of synthesis temperature and pressure on the growth rate and alignment of nanowires is presented for the most common silicon precursor, i.e., silane. Compared with previously reported protocols, the redefined galvanic displacement together with a silane-based CVD-VLS growth methodology provides a more standard and low-temperature (<650 °C) synthesis scheme and a compatible route to reliably grow Si nanowires in MEMS for advanced applications.
publishDate 2015
dc.date.none.fl_str_mv 2015
2026
2026
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/415953
https://api.elsevier.com/content/abstract/scopus_id/84928572010
url http://hdl.handle.net/10261/415953
https://api.elsevier.com/content/abstract/scopus_id/84928572010
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/EC/FP7-NMP-SMALL-2013-604169/
Nanotechnology
https://iopscience.iop.org/article/10.1088/0957-4484/26/19/195302
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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