Characterization of linear-mode avalanche photodiodes in standard CMOS

Linear-mode Avalanche PhotoDiodes (APDs) can be fabricated in standard CMOS processes for obtaining high multiplication gains that allow to determine the number of incident photons with great precision. This idea can be exploited in several application domains, such as image sensors, optical communi...

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Authors: Vilella Figueras, Eva, Vilà i Arbonès, Anna Maria, Palacio, Fernando, López de Miguel, Manuel, Diéguez Barrientos, Àngel
Format: article
Status:Published version
Publication Date:2014
Country:España
Institution:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repository:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/67161
Online Access:https://hdl.handle.net/2445/67161
Access Level:Open access
Keyword:Metall-òxid-semiconductors complementaris
Col·lisions (Física nuclear)
Circuits electrònics
Complementary metal oxide semiconductors
Collisions (Nuclear physics)
Electronic circuits
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spelling Characterization of linear-mode avalanche photodiodes in standard CMOSVilella Figueras, EvaVilà i Arbonès, Anna MariaPalacio, FernandoLópez de Miguel, ManuelDiéguez Barrientos, ÀngelMetall-òxid-semiconductors complementarisCol·lisions (Física nuclear)Circuits electrònicsComplementary metal oxide semiconductorsCollisions (Nuclear physics)Electronic circuitsLinear-mode Avalanche PhotoDiodes (APDs) can be fabricated in standard CMOS processes for obtaining high multiplication gains that allow to determine the number of incident photons with great precision. This idea can be exploited in several application domains, such as image sensors, optical communications and quantum information. In this work, we present a linear-mode APD fabricated in a 0.35 µm CMOS process and report its noise and gain characterization by means of two different experimental set-ups. Good matching is observed between the results obtained by means of the two different methods.Elsevier2015201520142015info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion4 p.application/pdfhttps://hdl.handle.net/2445/67161Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://ac.els-cdn.com/S1877705814027556/1-s2.0-S1877705814027556-main.pdf?_tid=198687e8-6369-11e5-a4ea-00000aab0f26&acdnat=1443174055_ae2c94dc43aa0be9Procedia Engineering, 2014, vol. 87, p. 728-731info:eu-repo/grantAgreement/EC/FP7/614168cc-by-nc-nd (c) Vilella Figueras, Eva et al., 2014http://creativecommons.org/licenses/by-nc-nd/3.0/esinfo:eu-repo/semantics/openAccessoai:recercat.cat:2445/671612026-05-29T05:05:01Z
dc.title.none.fl_str_mv Characterization of linear-mode avalanche photodiodes in standard CMOS
title Characterization of linear-mode avalanche photodiodes in standard CMOS
spellingShingle Characterization of linear-mode avalanche photodiodes in standard CMOS
Vilella Figueras, Eva
Metall-òxid-semiconductors complementaris
Col·lisions (Física nuclear)
Circuits electrònics
Complementary metal oxide semiconductors
Collisions (Nuclear physics)
Electronic circuits
title_short Characterization of linear-mode avalanche photodiodes in standard CMOS
title_full Characterization of linear-mode avalanche photodiodes in standard CMOS
title_fullStr Characterization of linear-mode avalanche photodiodes in standard CMOS
title_full_unstemmed Characterization of linear-mode avalanche photodiodes in standard CMOS
title_sort Characterization of linear-mode avalanche photodiodes in standard CMOS
dc.creator.none.fl_str_mv Vilella Figueras, Eva
Vilà i Arbonès, Anna Maria
Palacio, Fernando
López de Miguel, Manuel
Diéguez Barrientos, Àngel
author Vilella Figueras, Eva
author_facet Vilella Figueras, Eva
Vilà i Arbonès, Anna Maria
Palacio, Fernando
López de Miguel, Manuel
Diéguez Barrientos, Àngel
author_role author
author2 Vilà i Arbonès, Anna Maria
Palacio, Fernando
López de Miguel, Manuel
Diéguez Barrientos, Àngel
author2_role author
author
author
author
dc.subject.none.fl_str_mv Metall-òxid-semiconductors complementaris
Col·lisions (Física nuclear)
Circuits electrònics
Complementary metal oxide semiconductors
Collisions (Nuclear physics)
Electronic circuits
topic Metall-òxid-semiconductors complementaris
Col·lisions (Física nuclear)
Circuits electrònics
Complementary metal oxide semiconductors
Collisions (Nuclear physics)
Electronic circuits
description Linear-mode Avalanche PhotoDiodes (APDs) can be fabricated in standard CMOS processes for obtaining high multiplication gains that allow to determine the number of incident photons with great precision. This idea can be exploited in several application domains, such as image sensors, optical communications and quantum information. In this work, we present a linear-mode APD fabricated in a 0.35 µm CMOS process and report its noise and gain characterization by means of two different experimental set-ups. Good matching is observed between the results obtained by means of the two different methods.
publishDate 2014
dc.date.none.fl_str_mv 2014
2015
2015
2015
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/67161
url https://hdl.handle.net/2445/67161
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://ac.els-cdn.com/S1877705814027556/1-s2.0-S1877705814027556-main.pdf?_tid=198687e8-6369-11e5-a4ea-00000aab0f26&acdnat=1443174055_ae2c94dc43aa0be9
Procedia Engineering, 2014, vol. 87, p. 728-731
info:eu-repo/grantAgreement/EC/FP7/614168
dc.rights.none.fl_str_mv cc-by-nc-nd (c) Vilella Figueras, Eva et al., 2014
http://creativecommons.org/licenses/by-nc-nd/3.0/es
info:eu-repo/semantics/openAccess
rights_invalid_str_mv cc-by-nc-nd (c) Vilella Figueras, Eva et al., 2014
http://creativecommons.org/licenses/by-nc-nd/3.0/es
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4 p.
application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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