Cathodoluminescence studies of growth and process-induced defects in bulk gallium antimonide
The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. CL images have revealed a nonuniform distribution of native defects in GaSb wafers prepared from as-grown single crystals. Postgrowth anne...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1995 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/58963 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/58963 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Molecular-Beam Epitaxy Liquid-Phase Epitaxy Sb-Rich Solutions Gasb Photoluminescence Gaas Física de materiales |
| Sumario: | The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. CL images have revealed a nonuniform distribution of native defects in GaSb wafers prepared from as-grown single crystals. Postgrowth annealing in vacuum, gallium, and antimony atmospheres has been performed to obtain more accurate information about the defect structure in this material. In general, on annealing, homogeneous distribution of impurities is observed throughout the wafers. CL spectra show that a luminescence band (centered at 756 meV) is enhanced by annealing in a gallium atmosphere, suggesting that Ga atoms play an important role in the formation of this acceptor center. The 756 meV peak has been attributed to a transition from conduction band to an acceptor center comprised of Ga-Sb or a related complex. Interestingly, localized crystallization at the subgrain boundaries seems to occur by annealing in Ga atmosphere. |
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