Macroporous silicon for high-capacitance devices using metal electrodes
In this paper, high-capacity energy storage devices based on macroporous silicon are demonstrated. Small footprint devices with large specific capacitances up to 100 nF/mm(2), and an absolute capacitance above 15 mu F, have been successfully fabricated using standard microelectronics and MEMS techni...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2014 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/24556 |
| Acceso en línea: | https://hdl.handle.net/2117/24556 https://dx.doi.org/10.1186/1556-276X-9-473 |
| Access Level: | acceso abierto |
| Palabra clave: | Silicones Energy storage Macroporous silicon Porous silicon Electrochemical etching Electrodeposition Electro-deposition Electroplating High-density capacitors Electrochemical capacitors Arrays Carbon Supercapacitors Density Physics Design Energia--Emmagatzematge Àrees temàtiques de la UPC::Energies::Tecnologia energètica::Emmagatzematge i transport de l’energia Àrees temàtiques de la UPC::Enginyeria electrònica |
| Sumario: | In this paper, high-capacity energy storage devices based on macroporous silicon are demonstrated. Small footprint devices with large specific capacitances up to 100 nF/mm(2), and an absolute capacitance above 15 mu F, have been successfully fabricated using standard microelectronics and MEMS techniques. The fabricated devices are suitable for high-density system integration. The use of 3-D silicon structures allows achieving a large surface to volume ratio. The macroporous silicon structures are fabricated by electrochemical etching of silicon. This technique allows creating large structures of tubes with either straight or modulated radial profiles in depth. Furthermore, a very large aspect ratio is possible with this fabrication method. Macroporous silicon grown this way permits well-controlled structure definition with excellent repeatability and surface quality. Additionally, structure geometry can be accurately controlled to meet designer specifications. Macroporous silicon is used as one of the electrodes over which a silicon dioxide insulating layer is grown. Several insulator thicknesses have been tested. The second capacitor electrode is a solid nickel filling of the pores prepared by electroplating in a low-temperature industry standard process. The use of high-conductivity materials allows reaching small equivalent series resistance near 1 a |
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