Highly sensitive SnO2 nanowire network gas sensors

In this work we present a methodology for the localized growth of nanowires on prespecified areas of microhotplates that allows to independently adjust the device's resistance and its response to the gas. This is achieved through the fabrication stripes containing the nanowires, with or without...

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Detalhes bibliográficos
Autores: Domènech Gil, Guillem, Samà Monsonís, Jordi, Fàbrega Gallego, Cristian, Gracia, Isabel, Cané i Ballart, Carles, Barth, Sven, Romano Rodríguez, Albert
Tipo de documento: artigo
Estado:Versión aceptada para publicación
Data de publicação:2023
País:España
Recursos:Universidad de Barcelona
Repositório:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/198961
Acesso em linha:https://hdl.handle.net/2445/198961
Access Level:Acceso aberto
Palavra-chave:Nanoestructures
Detectors de gasos
Semiconductors
Nanostructures
Gas detectors
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spelling Highly sensitive SnO2 nanowire network gas sensorsDomènech Gil, GuillemSamà Monsonís, JordiFàbrega Gallego, CristianGracia, IsabelCané i Ballart, CarlesBarth, SvenRomano Rodríguez, AlbertNanoestructuresDetectors de gasosSemiconductorsNanostructuresGas detectorsSemiconductorsIn this work we present a methodology for the localized growth of nanowires on prespecified areas of microhotplates that allows to independently adjust the device's resistance and its response to the gas. This is achieved through the fabrication stripes containing the nanowires, with or without the presence of a gap in the stripe, giving rise that the nanowires bridge the current. The methodology is demonstrated growing SnO2 nanowirebased chemoresistors and the fabricated sensors have been characterized against CO and NO2. The results show the capability of tailoring nanowire stripe sizes from 1 to 100 μm, including empty areas of the same sizes along the sensing material, and a response increase by a factor of up to 500. We attribute the response enhancement to the absence of nucleation seeds in the gap area, where only arching nanowires can allow the current to flow between electrodes. In this way, the current flow along the bridge of nanowires is restricted principally to the surface conduction, which is controlled by the interaction of the nanowires with gases.Elsevier B.V.2023info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://hdl.handle.net/2445/198961Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésVersió postprint del document publicat a: https://doi.org/10.1016/j.snb.2023.133545Sensors and Actuators B-Chemical, 2023, vol. 383, p. 1-7https://doi.org/10.1016/j.snb.2023.133545cc-by-nc-nd (c) Elsevier B.V., 2023https://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/1989612026-05-27T06:46:51Z
dc.title.none.fl_str_mv Highly sensitive SnO2 nanowire network gas sensors
title Highly sensitive SnO2 nanowire network gas sensors
spellingShingle Highly sensitive SnO2 nanowire network gas sensors
Domènech Gil, Guillem
Nanoestructures
Detectors de gasos
Semiconductors
Nanostructures
Gas detectors
Semiconductors
title_short Highly sensitive SnO2 nanowire network gas sensors
title_full Highly sensitive SnO2 nanowire network gas sensors
title_fullStr Highly sensitive SnO2 nanowire network gas sensors
title_full_unstemmed Highly sensitive SnO2 nanowire network gas sensors
title_sort Highly sensitive SnO2 nanowire network gas sensors
dc.creator.none.fl_str_mv Domènech Gil, Guillem
Samà Monsonís, Jordi
Fàbrega Gallego, Cristian
Gracia, Isabel
Cané i Ballart, Carles
Barth, Sven
Romano Rodríguez, Albert
author Domènech Gil, Guillem
author_facet Domènech Gil, Guillem
Samà Monsonís, Jordi
Fàbrega Gallego, Cristian
Gracia, Isabel
Cané i Ballart, Carles
Barth, Sven
Romano Rodríguez, Albert
author_role author
author2 Samà Monsonís, Jordi
Fàbrega Gallego, Cristian
Gracia, Isabel
Cané i Ballart, Carles
Barth, Sven
Romano Rodríguez, Albert
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Nanoestructures
Detectors de gasos
Semiconductors
Nanostructures
Gas detectors
Semiconductors
topic Nanoestructures
Detectors de gasos
Semiconductors
Nanostructures
Gas detectors
Semiconductors
description In this work we present a methodology for the localized growth of nanowires on prespecified areas of microhotplates that allows to independently adjust the device's resistance and its response to the gas. This is achieved through the fabrication stripes containing the nanowires, with or without the presence of a gap in the stripe, giving rise that the nanowires bridge the current. The methodology is demonstrated growing SnO2 nanowirebased chemoresistors and the fabricated sensors have been characterized against CO and NO2. The results show the capability of tailoring nanowire stripe sizes from 1 to 100 μm, including empty areas of the same sizes along the sensing material, and a response increase by a factor of up to 500. We attribute the response enhancement to the absence of nucleation seeds in the gap area, where only arching nanowires can allow the current to flow between electrodes. In this way, the current flow along the bridge of nanowires is restricted principally to the surface conduction, which is controlled by the interaction of the nanowires with gases.
publishDate 2023
dc.date.none.fl_str_mv 2023
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/198961
url https://hdl.handle.net/2445/198961
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: https://doi.org/10.1016/j.snb.2023.133545
Sensors and Actuators B-Chemical, 2023, vol. 383, p. 1-7
https://doi.org/10.1016/j.snb.2023.133545
dc.rights.none.fl_str_mv cc-by-nc-nd (c) Elsevier B.V., 2023
https://creativecommons.org/licenses/by-nc-nd/4.0/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv cc-by-nc-nd (c) Elsevier B.V., 2023
https://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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