Influence of RF power on the properties of sputtered ZnO:Al thin films
Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350Wwhereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as-deposited films...
| Autores: | , , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión enviada para evaluación y publicación |
| Fecha de publicación: | 2010 |
| País: | España |
| Institución: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/47124 |
| Acceso en línea: | https://hdl.handle.net/2445/47124 |
| Access Level: | acceso abierto |
| Palabra clave: | Òxids metàl·lics Optoelectrònica Metall-òxid-semiconductors Pel·lícules fines Cèl·lules fotoelèctriques Metallic oxides Optoelectronics Metal oxide semiconductors Thin films Photoelectric cells |
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Influence of RF power on the properties of sputtered ZnO:Al thin filmsAntony, AldrinCarreras Seguí, PazKeitzl, ThomasRoldán Molinero, RubénNos Aguilà, OriolFrigeri, Paolo AntonioAsensi López, José MiguelBertomeu i Balagueró, JoanÒxids metàl·licsOptoelectrònicaMetall-òxid-semiconductorsPel·lícules finesCèl·lules fotoelèctriquesMetallic oxidesOptoelectronicsMetal oxide semiconductorsThin filmsPhotoelectric cellsTransparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350Wwhereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as-deposited films were found to be influenced by the deposition power. The X-ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44-3.58 eV. The lowest resistivity of 1.2×10 -3Vcm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power.Wiley-VCH2013201920102013info:eu-repo/semantics/articleinfo:eu-repo/semantics/submittedVersion4 p.application/pdfhttps://hdl.handle.net/2445/47124Articles publicats en revistes (Física Aplicada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésVersió preprint del document publicat a: http://dx.doi.org/10.1002/pssa.200983765physica status solidi (a), 2010, vol. 207, num. 7, p. 1577-1580http://dx.doi.org/10.1002/pssa.200983765(c) Wiley-VCH, 2010info:eu-repo/semantics/openAccessoai:recercat.cat:2445/471242026-05-29T05:05:01Z |
| dc.title.none.fl_str_mv |
Influence of RF power on the properties of sputtered ZnO:Al thin films |
| title |
Influence of RF power on the properties of sputtered ZnO:Al thin films |
| spellingShingle |
Influence of RF power on the properties of sputtered ZnO:Al thin films Antony, Aldrin Òxids metàl·lics Optoelectrònica Metall-òxid-semiconductors Pel·lícules fines Cèl·lules fotoelèctriques Metallic oxides Optoelectronics Metal oxide semiconductors Thin films Photoelectric cells |
| title_short |
Influence of RF power on the properties of sputtered ZnO:Al thin films |
| title_full |
Influence of RF power on the properties of sputtered ZnO:Al thin films |
| title_fullStr |
Influence of RF power on the properties of sputtered ZnO:Al thin films |
| title_full_unstemmed |
Influence of RF power on the properties of sputtered ZnO:Al thin films |
| title_sort |
Influence of RF power on the properties of sputtered ZnO:Al thin films |
| dc.creator.none.fl_str_mv |
Antony, Aldrin Carreras Seguí, Paz Keitzl, Thomas Roldán Molinero, Rubén Nos Aguilà, Oriol Frigeri, Paolo Antonio Asensi López, José Miguel Bertomeu i Balagueró, Joan |
| author |
Antony, Aldrin |
| author_facet |
Antony, Aldrin Carreras Seguí, Paz Keitzl, Thomas Roldán Molinero, Rubén Nos Aguilà, Oriol Frigeri, Paolo Antonio Asensi López, José Miguel Bertomeu i Balagueró, Joan |
| author_role |
author |
| author2 |
Carreras Seguí, Paz Keitzl, Thomas Roldán Molinero, Rubén Nos Aguilà, Oriol Frigeri, Paolo Antonio Asensi López, José Miguel Bertomeu i Balagueró, Joan |
| author2_role |
author author author author author author author |
| dc.subject.none.fl_str_mv |
Òxids metàl·lics Optoelectrònica Metall-òxid-semiconductors Pel·lícules fines Cèl·lules fotoelèctriques Metallic oxides Optoelectronics Metal oxide semiconductors Thin films Photoelectric cells |
| topic |
Òxids metàl·lics Optoelectrònica Metall-òxid-semiconductors Pel·lícules fines Cèl·lules fotoelèctriques Metallic oxides Optoelectronics Metal oxide semiconductors Thin films Photoelectric cells |
| description |
Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350Wwhereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as-deposited films were found to be influenced by the deposition power. The X-ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44-3.58 eV. The lowest resistivity of 1.2×10 -3Vcm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power. |
| publishDate |
2010 |
| dc.date.none.fl_str_mv |
2010 2013 2013 2019 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/submittedVersion |
| format |
article |
| status_str |
submittedVersion |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/2445/47124 |
| url |
https://hdl.handle.net/2445/47124 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
Versió preprint del document publicat a: http://dx.doi.org/10.1002/pssa.200983765 physica status solidi (a), 2010, vol. 207, num. 7, p. 1577-1580 http://dx.doi.org/10.1002/pssa.200983765 |
| dc.rights.none.fl_str_mv |
(c) Wiley-VCH, 2010 info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
(c) Wiley-VCH, 2010 |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
4 p. application/pdf |
| dc.publisher.none.fl_str_mv |
Wiley-VCH |
| publisher.none.fl_str_mv |
Wiley-VCH |
| dc.source.none.fl_str_mv |
Articles publicats en revistes (Física Aplicada) reponame:Recercat. Dipósit de la Recerca de Catalunya instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
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Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| reponame_str |
Recercat. Dipósit de la Recerca de Catalunya |
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Recercat. Dipósit de la Recerca de Catalunya |
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1869410524954886144 |
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15,812429 |