Europium doped gallium oxide nanostructures for room temperature luminescent photonic devices
Cathodoluminescence and photoluminescence techniques have been used to investigate room temperature light emission from ß-Ga_2O_3:Eu nanostructures, which were obtained by two methods. In one of them, a mixture of Ga_2O_3/Eu2O3 powders was used as precursor material and annealed under an argon flow....
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2009 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/44099 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/44099 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Nanowires Silicon Física de materiales |
| Sumario: | Cathodoluminescence and photoluminescence techniques have been used to investigate room temperature light emission from ß-Ga_2O_3:Eu nanostructures, which were obtained by two methods. In one of them, a mixture of Ga_2O_3/Eu2O3 powders was used as precursor material and annealed under an argon flow. In the other one, undoped ß-Ga2O3 nanostructures were first obtained by thermal oxidation of metallic gallium and europium was subsequently incorporated by a diffusion process. Room temperature luminescence at 610 nm due to Eu^(3+) intraionic transitions from ß-Ga_2O_3: Eu has been observed. Waveguiding of this red emitted light through the structures was shown. |
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