Insights on the thermal stability of the Sb2Se3 quasi-1D photovoltaic technology

This work explores the thermal stability of antimony-based photovoltaic (PV) technologies investigating the effect of low-temperature (50—350¿°C) postdeposition annealings (PDAs) on bare Sb2Se3 absorbers and complete SLG/Mo/Sb2Se3/CdS/i-ZnO/ITO devices (5.7% power conversion efficiency with no anti-...

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Detalles Bibliográficos
Autores: Vidal Fuentes, Pedro, Guc, Maxim|||0000-0002-2072-9566, Becerril Romero, Ignacio, Sylla, Dioulde Huguette|||0000-0002-5548-1257, Alcobé Olle, Xavier, Sánchez González, Yudania|||0000-0002-5740-1150, Pérez Rodríguez, Alejandro, Saucedo Silva, Edgardo Ademar|||0000-0003-2123-6162, Izquierdo Roca, Víctor
Tipo de recurso: artículo
Fecha de publicación:2021
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/361241
Acceso en línea:https://hdl.handle.net/2117/361241
https://dx.doi.org/10.1002/solr.202100517
Access Level:acceso abierto
Palabra clave:Photovoltaic power generation
Energia solar fotovoltaica
Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica
Descripción
Sumario:This work explores the thermal stability of antimony-based photovoltaic (PV) technologies investigating the effect of low-temperature (50—350¿°C) postdeposition annealings (PDAs) on bare Sb2Se3 absorbers and complete SLG/Mo/Sb2Se3/CdS/i-ZnO/ITO devices (5.7% power conversion efficiency with no anti-reflecting coating or metallic grid). A comprehensive structural analysis by means of X-ray diffraction and Raman spectroscopy, coupled with optoelectronic characterization, reveals clear evidences of a degradation process dominated by selenium diffusion. The degradation process is observed to start at low PDA temperatures as a shrinkage of the Sb2Se3 unit cell. Further increasing the PDA temperature above 200¿°C leads to the formation of Sb oxides and Se secondary phases in bare absorbers, and of CdS1—x Se x in complete devices at the Sb2Se3 front interface which completely degrade the heterojunction and kill device performance. Furthermore, a clear correlation is found between PV performance decrease and Sb2Se3 layer lattice shrinkage with the increasing PDA temperature (T¿>¿50¿°C). This is the first time that thermal instability is reported for the Sb2Se3 compound at temperatures commonly used during PV module fabrication processes such as emitter/transparent conducting oxide deposition or encapsulation.

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