Insight into the compositional and structural nano features of AlN/GaN DBRs by EELS-HAADF

: III-V nitride ~AlGa!N distributed Bragg reflector devices are characterized by combined high-angle annular dark-field ~HAADF! and electron energy loss spectroscopy ~EELS! in the scanning transmission electron microscope. Besides the complete structural characterization of the AlN and GaN layers, t...

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Autores: Eljarrat Ascunce, Alberto, López Conesa, Lluís, Magén, César, Gacevic, Zarko, Fernández-Garrido, S., Calleja Pardo, Enrique, Estradé Albiol, Sònia, Peiró Martínez, Francisca
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2013
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/69693
Acceso en línea:https://hdl.handle.net/2445/69693
Access Level:acceso abierto
Palabra clave:Espectroscòpia d'electrons
Electron spectroscopy
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spelling Insight into the compositional and structural nano features of AlN/GaN DBRs by EELS-HAADFEljarrat Ascunce, AlbertoLópez Conesa, LluísMagén, CésarGacevic, ZarkoFernández-Garrido, S.Calleja Pardo, EnriqueEstradé Albiol, SòniaPeiró Martínez, FranciscaEspectroscòpia d'electronsElectron spectroscopy: III-V nitride ~AlGa!N distributed Bragg reflector devices are characterized by combined high-angle annular dark-field ~HAADF! and electron energy loss spectroscopy ~EELS! in the scanning transmission electron microscope. Besides the complete structural characterization of the AlN and GaN layers, the formation of AlGaN transient layers is revealed using Vegard law on profiles of the position of the bulk plasmon peak maximum. This result is confirmed by comparison of experimental and simulated HAADF intensities. In addition, we present an advantageous method for the characterization of nano-feature structures using low-loss EELS spectrum image ~EEL-SI! analysis. Information from the materials in the sample is extracted from these EEL-SI at high spatial resolution.The log-ratio formula is used to calculate the relative thickness, related to the electron inelastic mean free path. Fitting of the bulk plasmon is performed using a damped plasmon model ~DPM! equation. The maximum of this peak is related to the chemical composition variation using the previous Vegard law analysis. In addition, within the context of the DPM, information regarding the structural properties of the material can be obtained from the lifetime of the oscillation. Three anomalous segregation regions are characterized, revealing formation of metallic Al islands.Cambridge University Press2013info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/69693Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: http://dx.doi.org/10.1017/S1431927613000512Microscopy and Microanalysis, 2013, vol. 19, num. 3, p. 698-705http://dx.doi.org/10.1017/S1431927613000512(c) Cambridge University Press, 2013info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/696932026-05-27T06:46:51Z
dc.title.none.fl_str_mv Insight into the compositional and structural nano features of AlN/GaN DBRs by EELS-HAADF
title Insight into the compositional and structural nano features of AlN/GaN DBRs by EELS-HAADF
spellingShingle Insight into the compositional and structural nano features of AlN/GaN DBRs by EELS-HAADF
Eljarrat Ascunce, Alberto
Espectroscòpia d'electrons
Electron spectroscopy
title_short Insight into the compositional and structural nano features of AlN/GaN DBRs by EELS-HAADF
title_full Insight into the compositional and structural nano features of AlN/GaN DBRs by EELS-HAADF
title_fullStr Insight into the compositional and structural nano features of AlN/GaN DBRs by EELS-HAADF
title_full_unstemmed Insight into the compositional and structural nano features of AlN/GaN DBRs by EELS-HAADF
title_sort Insight into the compositional and structural nano features of AlN/GaN DBRs by EELS-HAADF
dc.creator.none.fl_str_mv Eljarrat Ascunce, Alberto
López Conesa, Lluís
Magén, César
Gacevic, Zarko
Fernández-Garrido, S.
Calleja Pardo, Enrique
Estradé Albiol, Sònia
Peiró Martínez, Francisca
author Eljarrat Ascunce, Alberto
author_facet Eljarrat Ascunce, Alberto
López Conesa, Lluís
Magén, César
Gacevic, Zarko
Fernández-Garrido, S.
Calleja Pardo, Enrique
Estradé Albiol, Sònia
Peiró Martínez, Francisca
author_role author
author2 López Conesa, Lluís
Magén, César
Gacevic, Zarko
Fernández-Garrido, S.
Calleja Pardo, Enrique
Estradé Albiol, Sònia
Peiró Martínez, Francisca
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Espectroscòpia d'electrons
Electron spectroscopy
topic Espectroscòpia d'electrons
Electron spectroscopy
description : III-V nitride ~AlGa!N distributed Bragg reflector devices are characterized by combined high-angle annular dark-field ~HAADF! and electron energy loss spectroscopy ~EELS! in the scanning transmission electron microscope. Besides the complete structural characterization of the AlN and GaN layers, the formation of AlGaN transient layers is revealed using Vegard law on profiles of the position of the bulk plasmon peak maximum. This result is confirmed by comparison of experimental and simulated HAADF intensities. In addition, we present an advantageous method for the characterization of nano-feature structures using low-loss EELS spectrum image ~EEL-SI! analysis. Information from the materials in the sample is extracted from these EEL-SI at high spatial resolution.The log-ratio formula is used to calculate the relative thickness, related to the electron inelastic mean free path. Fitting of the bulk plasmon is performed using a damped plasmon model ~DPM! equation. The maximum of this peak is related to the chemical composition variation using the previous Vegard law analysis. In addition, within the context of the DPM, information regarding the structural properties of the material can be obtained from the lifetime of the oscillation. Three anomalous segregation regions are characterized, revealing formation of metallic Al islands.
publishDate 2013
dc.date.none.fl_str_mv 2013
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/69693
url https://hdl.handle.net/2445/69693
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1017/S1431927613000512
Microscopy and Microanalysis, 2013, vol. 19, num. 3, p. 698-705
http://dx.doi.org/10.1017/S1431927613000512
dc.rights.none.fl_str_mv (c) Cambridge University Press, 2013
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Cambridge University Press, 2013
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Cambridge University Press
publisher.none.fl_str_mv Cambridge University Press
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300719

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