Domain distributions in tetragonal ferroelectric thin films probed by optical second harmonic generation
Controlling the domain arrangement in a ferroelectric material is the key to accessing its functional properties. However, when a ferroelectric thin film is inserted into a multilayer device architecture, conventional characterization techniques provide limited access to the buried distribution of p...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2023 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/341675 |
| Acceso en línea: | http://hdl.handle.net/10261/341675 https://api.elsevier.com/content/abstract/scopus_id/85175202023 |
| Access Level: | acceso abierto |
| Palabra clave: | Ferroelectric domains Ferroelectrics Thin films |
| Sumario: | Controlling the domain arrangement in a ferroelectric material is the key to accessing its functional properties. However, when a ferroelectric thin film is inserted into a multilayer device architecture, conventional characterization techniques provide limited access to the buried distribution of polar states. Here we show that a combination of nondestructive remote probing by nonlinear optics and symmetry analysis allows the unique distinction of the polar orientations coexisting in tetragonal ferroelectric films. We quantify the volumetric ratio between in-plane and out-of-plane polarized domains, and we further illustrate that our approach incorporates the strain-induced changes to the nonlinear susceptibility tensor. We perform the experiment on Pb(Zr0.2Ti0.8)O3 thin films, but the generality of the approach permits its extension to other ferroelectric materials. |
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