Compositionally tunable Néel temperature in Mn1-xCoxN

To address growing computational demands, energy-efficient hardware technologies such as spintronics and neuromorphic computing have attracted significant interest. In particular, magneto-ionics offers a low-power, non-volatile approach to control magnetic properties, making it particularly suitable...

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Authors: López-Pintó, Nicolau|||0000-0001-5145-6153, Jensen, Christopher J.|||0000-0001-7459-1841, Chen, Zhijie|||0000-0002-3594-5560, Zeng, Zihui|||0009-0009-6311-4666, Kinane, Christy J.|||0000-0002-1185-0719, Caruana, Andrew J.|||0000-0003-0715-5876, Grutter, Alexander J., Borchers, Julie A.|||0000-0002-3348-8212, Menéndez, Enric|||0000-0003-3809-2863, Nogués, Josep|||0000-0003-4616-1371, Liu, Kai|||0000-0001-9413-6782, Sort, Jordi|||0000-0003-1213-3639
Format: article
Publication Date:2027
Country:España
Institution:Universitat Autònoma de Barcelona
Repository:Dipòsit Digital de Documents de la UAB
Language:English
OAI Identifier:oai:dnet:uabarcelona_::56645177b915a9d784a34619b5fb092b
Online Access:https://ddd.uab.cat/record/328462
https://dx.doi.org/urn:doi:10.1016/j.jmst.2026.04.010
Access Level:Open access
Keyword:Magneto-ionics
Exchange bias
MnCoN
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Summary:To address growing computational demands, energy-efficient hardware technologies such as spintronics and neuromorphic computing have attracted significant interest. In particular, magneto-ionics offers a low-power, non-volatile approach to control magnetic properties, making it particularly suitable for manipulating antiferromagnetic (AFM) materials. In this work, we report magneto-ionic control of exchange bias (EB) in Mn CoN/Co with a compositionally tunable Néel temperature, T. The high T in MnN (> 650 K) typically necessitates high-temperature annealing, which triggers uncontrolled thermally induced ion-motion effects. Addition of Co to MnN reduces T, enabling robust EB to be established after field cooling from 400 K, while preserving structural integrity. Importantly, EB can be subsequently tuned by voltage, up to a 30% enhancement observed at 100 K alongside an increase in saturation magnetization (up to ≈ 250 emu cm). Unlike previous works on similar single-layer nitrides, incorporating an additional ferromagnetic Co layer to form an AFM/ferromagnetic bilayer amplifies the voltage-induced effects. This work highlights the dual role of Co addition to MnN: (i) reducing the thermal requirements for setting EB by lowering T, and (ii) enhancing electrical control of EB. These results represent a step forward towards the development of low-power voltage-controlled spintronic devices.

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