Parallel writing by local oxidation nanolithography with submicrometer resolution

We demonstrate that the process of local oxidation of surfaces by atomic force microscopy (AFM) can be upscaled in a straightforward way by using a solid support with multiple protrusions as the cathode electrode. A metallized digital video disk DVD polymeric support has been used as a stamp to gene...

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Detalles Bibliográficos
Autores: Cavallini, Massimiliano, Mei, Paolo, Biscarini, Fabio, García García, Ricardo
Tipo de recurso: artículo
Fecha de publicación:2003
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/24991
Acceso en línea:http://hdl.handle.net/10261/24991
Access Level:acceso abierto
Palabra clave:Silicon
Elemental semiconductors
Oxidation
Nanolithography
Atomic force microscopy
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spelling Parallel writing by local oxidation nanolithography with submicrometer resolutionCavallini, MassimilianoMei, PaoloBiscarini, FabioGarcía García, RicardoSiliconElemental semiconductorsOxidationNanolithographyAtomic force microscopyWe demonstrate that the process of local oxidation of surfaces by atomic force microscopy (AFM) can be upscaled in a straightforward way by using a solid support with multiple protrusions as the cathode electrode. A metallized digital video disk DVD polymeric support has been used as a stamp to generate an array of features of variable length and 100 nm in width on a silicon surface covering a 5×6 mm2 region. The parallel patterning process involves the formation of as many liquid bridges as there are protrusions in the stamp. The growth rate of the parallel local oxides is slightly smaller than the one obtained by AFM experiments. Nonetheless, results from AFM local oxidation experiments can be readily extended to parallel oxidation which in turn opens the possibility of patterning centimeter-square regions with 10 nm motives.This work is supported by EC-Growth RTD Project MONA LISA G5RD-CT-2000-00349.Peer reviewedAmerican Institute of Physics201020102003info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501271439 bytesapplication/pdfhttp://hdl.handle.net/10261/24991reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1063/1.1633685info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/249912026-05-22T06:33:51Z
dc.title.none.fl_str_mv Parallel writing by local oxidation nanolithography with submicrometer resolution
title Parallel writing by local oxidation nanolithography with submicrometer resolution
spellingShingle Parallel writing by local oxidation nanolithography with submicrometer resolution
Cavallini, Massimiliano
Silicon
Elemental semiconductors
Oxidation
Nanolithography
Atomic force microscopy
title_short Parallel writing by local oxidation nanolithography with submicrometer resolution
title_full Parallel writing by local oxidation nanolithography with submicrometer resolution
title_fullStr Parallel writing by local oxidation nanolithography with submicrometer resolution
title_full_unstemmed Parallel writing by local oxidation nanolithography with submicrometer resolution
title_sort Parallel writing by local oxidation nanolithography with submicrometer resolution
dc.creator.none.fl_str_mv Cavallini, Massimiliano
Mei, Paolo
Biscarini, Fabio
García García, Ricardo
author Cavallini, Massimiliano
author_facet Cavallini, Massimiliano
Mei, Paolo
Biscarini, Fabio
García García, Ricardo
author_role author
author2 Mei, Paolo
Biscarini, Fabio
García García, Ricardo
author2_role author
author
author
dc.subject.none.fl_str_mv Silicon
Elemental semiconductors
Oxidation
Nanolithography
Atomic force microscopy
topic Silicon
Elemental semiconductors
Oxidation
Nanolithography
Atomic force microscopy
description We demonstrate that the process of local oxidation of surfaces by atomic force microscopy (AFM) can be upscaled in a straightforward way by using a solid support with multiple protrusions as the cathode electrode. A metallized digital video disk DVD polymeric support has been used as a stamp to generate an array of features of variable length and 100 nm in width on a silicon surface covering a 5×6 mm2 region. The parallel patterning process involves the formation of as many liquid bridges as there are protrusions in the stamp. The growth rate of the parallel local oxides is slightly smaller than the one obtained by AFM experiments. Nonetheless, results from AFM local oxidation experiments can be readily extended to parallel oxidation which in turn opens the possibility of patterning centimeter-square regions with 10 nm motives.
publishDate 2003
dc.date.none.fl_str_mv 2003
2010
2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
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dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/24991
url http://hdl.handle.net/10261/24991
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://dx.doi.org/10.1063/1.1633685
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 271439 bytes
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
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repository.mail.fl_str_mv
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