Plasma-enhanced chemical vapor deposition of boron nitride thin films from B2H6-H2-NH3 and B2H6-N2 gas mixtures

Highly transparent and stoichiometric boron nitride (BN) films were deposited on both electrodes (anode and cathode) of a radio-frequency parallel-plate plasma reactor by the glow discharge decomposition of two gas mixtures: B2H6-H2-NH3 and B2H6-N2. The chemical, optical, and structural properties o...

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Autores: Andújar Bella, José Luis, Bertrán Serra, Enric, Polo Trasancos, Ma. del Carmen
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1998
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/25046
Acceso en línea:https://hdl.handle.net/2445/25046
Access Level:acceso abierto
Palabra clave:Nitrur de bor
Pel·lícules fines
Microelectrònica
Electroquímica
Boron nitride
Thin films
Microelectronics
Electrochemistry
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spelling Plasma-enhanced chemical vapor deposition of boron nitride thin films from B2H6-H2-NH3 and B2H6-N2 gas mixturesAndújar Bella, José LuisBertrán Serra, EnricPolo Trasancos, Ma. del CarmenNitrur de borPel·lícules finesMicroelectrònicaElectroquímicaBoron nitrideThin filmsMicroelectronicsElectrochemistryHighly transparent and stoichiometric boron nitride (BN) films were deposited on both electrodes (anode and cathode) of a radio-frequency parallel-plate plasma reactor by the glow discharge decomposition of two gas mixtures: B2H6-H2-NH3 and B2H6-N2. The chemical, optical, and structural properties of the films, as well as their stability under long exposition to humid atmosphere, were analyzed by x-ray photoelectron, infrared, and Raman spectroscopies; scanning and transmission electron microscopies; and optical transmittance spectrophotometry. It was found that the BN films grown on the anode using the B2H6-H2-NH3 mixture were smooth, dense, adhered well to substrates, and had a textured hexagonal structure with the basal planes perpendicular to the film surface. These films were chemically stable to moisture, even after an exposition period of two years. In contrast, the films grown on the anode from the B2H6-N2 mixture showed tensile stress failure and were very unstable in the presence of moisture. However, the films grown on the cathode from B2H6-H2-NH3 gases suffered from compressive stress failure on exposure to air; whereas with B2H6-N2 gases, adherent and stable cathodic BN films were obtained with the same crystallographic texture as anodic films prepared from the B2H6-H2-NH3 mixture. These results are discussed in terms of the origin of film stress, the effects of ion bombardment on the growing films, and the surface chemical effects of hydrogen atoms present in the gas discharge.American Institute of Physics1998info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/25046Articles publicats en revistes (Física Aplicada)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: http://dx.doi.org/10.1116/1.581097Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 1998, vol. 16, num. 2, p. 578-586http://dx.doi.org/10.1116/1.581097(c) American Institute of Physics, 1998info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/250462026-05-27T06:46:51Z
dc.title.none.fl_str_mv Plasma-enhanced chemical vapor deposition of boron nitride thin films from B2H6-H2-NH3 and B2H6-N2 gas mixtures
title Plasma-enhanced chemical vapor deposition of boron nitride thin films from B2H6-H2-NH3 and B2H6-N2 gas mixtures
spellingShingle Plasma-enhanced chemical vapor deposition of boron nitride thin films from B2H6-H2-NH3 and B2H6-N2 gas mixtures
Andújar Bella, José Luis
Nitrur de bor
Pel·lícules fines
Microelectrònica
Electroquímica
Boron nitride
Thin films
Microelectronics
Electrochemistry
title_short Plasma-enhanced chemical vapor deposition of boron nitride thin films from B2H6-H2-NH3 and B2H6-N2 gas mixtures
title_full Plasma-enhanced chemical vapor deposition of boron nitride thin films from B2H6-H2-NH3 and B2H6-N2 gas mixtures
title_fullStr Plasma-enhanced chemical vapor deposition of boron nitride thin films from B2H6-H2-NH3 and B2H6-N2 gas mixtures
title_full_unstemmed Plasma-enhanced chemical vapor deposition of boron nitride thin films from B2H6-H2-NH3 and B2H6-N2 gas mixtures
title_sort Plasma-enhanced chemical vapor deposition of boron nitride thin films from B2H6-H2-NH3 and B2H6-N2 gas mixtures
dc.creator.none.fl_str_mv Andújar Bella, José Luis
Bertrán Serra, Enric
Polo Trasancos, Ma. del Carmen
author Andújar Bella, José Luis
author_facet Andújar Bella, José Luis
Bertrán Serra, Enric
Polo Trasancos, Ma. del Carmen
author_role author
author2 Bertrán Serra, Enric
Polo Trasancos, Ma. del Carmen
author2_role author
author
dc.subject.none.fl_str_mv Nitrur de bor
Pel·lícules fines
Microelectrònica
Electroquímica
Boron nitride
Thin films
Microelectronics
Electrochemistry
topic Nitrur de bor
Pel·lícules fines
Microelectrònica
Electroquímica
Boron nitride
Thin films
Microelectronics
Electrochemistry
description Highly transparent and stoichiometric boron nitride (BN) films were deposited on both electrodes (anode and cathode) of a radio-frequency parallel-plate plasma reactor by the glow discharge decomposition of two gas mixtures: B2H6-H2-NH3 and B2H6-N2. The chemical, optical, and structural properties of the films, as well as their stability under long exposition to humid atmosphere, were analyzed by x-ray photoelectron, infrared, and Raman spectroscopies; scanning and transmission electron microscopies; and optical transmittance spectrophotometry. It was found that the BN films grown on the anode using the B2H6-H2-NH3 mixture were smooth, dense, adhered well to substrates, and had a textured hexagonal structure with the basal planes perpendicular to the film surface. These films were chemically stable to moisture, even after an exposition period of two years. In contrast, the films grown on the anode from the B2H6-N2 mixture showed tensile stress failure and were very unstable in the presence of moisture. However, the films grown on the cathode from B2H6-H2-NH3 gases suffered from compressive stress failure on exposure to air; whereas with B2H6-N2 gases, adherent and stable cathodic BN films were obtained with the same crystallographic texture as anodic films prepared from the B2H6-H2-NH3 mixture. These results are discussed in terms of the origin of film stress, the effects of ion bombardment on the growing films, and the surface chemical effects of hydrogen atoms present in the gas discharge.
publishDate 1998
dc.date.none.fl_str_mv 1998
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/25046
url https://hdl.handle.net/2445/25046
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1116/1.581097
Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 1998, vol. 16, num. 2, p. 578-586
http://dx.doi.org/10.1116/1.581097
dc.rights.none.fl_str_mv (c) American Institute of Physics, 1998
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics, 1998
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.300724

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