Tuning the metal-insulator transition temperature by the controlled generation of oxygen vacancies on La0.7Ca0.3MnO3-x epitaxial thin films
This report presents a study on the effect of the controlled generation of oxygen vacancies on the electronic transport properties of La0.7Ca0.3MnO3-x epitaxial thin films. Oxygen defects cause significant changes in the crystalline structure of mixed-valence manganites and lower the Mn valence, res...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/377953 |
| Acceso en línea: | http://hdl.handle.net/10261/377953 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85189461724&doi=10.1016%2fj.jallcom.2024.174321&partnerID=40&md5=01a0a27f51a1511a080101aea7538cd2 |
| Access Level: | acceso abierto |
| Palabra clave: | Electronic properties Metal-insulator transition Mixed valence manganites Oxygen vacancies Polarized EXAFS |
| Sumario: | This report presents a study on the effect of the controlled generation of oxygen vacancies on the electronic transport properties of La0.7Ca0.3MnO3-x epitaxial thin films. Oxygen defects cause significant changes in the crystalline structure of mixed-valence manganites and lower the Mn valence, resulting in a shift of the metal-insulator transition to lower temperatures due to modifications in the angles and lengths of Mn-O bonds. Experiments using Polarized Extended X-Ray Absorption Fine Structure Spectroscopy have provided strong evidence that oxygen vacancies are mainly formed in the basal plane of the MnO6 octahedra. The accurate control of oxygen vacancies generation opens possibilities for managing and enhancing the magneto-electronic properties of epitaxial manganite thin films with potential in industrial applications. © 2024 The Authors |
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