Electron-electron interaction and weak localization effects in badly metallic SrRuO_(3)
We report on the effect of light ion irradiation on the low-temperature electrical resistivity of ferromagnetic SrRuO_(3) thin films. Fresh samples displayed a ferromagnetic transition at T_(c)̴ 160 K, good metallic behavior (ρ(300 K)~400μΩcm, dρ/dT>0) at room temperature, and the low-temperature...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2001 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59640 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59640 |
| Access Level: | acceso abierto |
| Palabra clave: | 537 Itinerant ferromagnet SrRuO_(3) Insulator-transition Thin-films Conductivity Transport Resistivity Saturation. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Sumario: | We report on the effect of light ion irradiation on the low-temperature electrical resistivity of ferromagnetic SrRuO_(3) thin films. Fresh samples displayed a ferromagnetic transition at T_(c)̴ 160 K, good metallic behavior (ρ(300 K)~400μΩcm, dρ/dT>0) at room temperature, and the low-temperature upturn in the electrical resistivity commonly found in SrRuO_(3). Badly metallic films, displaying high values of the electrical resistivity (O(1000μΩcm)) and incipient nonmetallic behavior (dρ/dT<0) at low temperature, were obtained by He+ irradiation. For high enough irradiation doses, these samples did not show magnetic order down to the base temperature of our experiments. The temperature dependence of the electrical conductivity of virgin and irradiated samples is discussed in terms of a weak localization contribution plus a large electron-electron interaction term. The magnitude of the e^(-)-e^(-) contribution reflects the enhancement of strong electron correlations in SrRuO_(3) due to disorder. |
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