Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

A study of the high-frequency performance of GaN-based asymmetric self-switching diodes (SSDs) designed for a room-temperature sub-THz Gunn emission, and connected to a resonant RLC parallel circuit, is reported. With the aim of facilitating the achievement and control of Gunn oscillations, which ca...

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Autores: García Vasallo, Beatriz, Millithaler, Jean Francois, Íñiguez-de-la-Torre, Ignacio, González Sánchez, Tomás, Ducournau, Guillaume, Gaquiere, Christophe, Mateos López, Javier
Tipo de recurso: artículo
Fecha de publicación:2014
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/130338
Acceso en línea:http://hdl.handle.net/10366/130338
Access Level:acceso abierto
Palabra clave:GaN diodes
Terahertz
Resonant circuits
Monte Carlo method
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spelling Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuitsGarcía Vasallo, BeatrizMillithaler, Jean FrancoisÍñiguez-de-la-Torre, IgnacioGonzález Sánchez, TomásDucournau, GuillaumeGaquiere, ChristopheMateos López, JavierGaN diodesTerahertzResonant circuitsMonte Carlo methodA study of the high-frequency performance of GaN-based asymmetric self-switching diodes (SSDs) designed for a room-temperature sub-THz Gunn emission, and connected to a resonant RLC parallel circuit, is reported. With the aim of facilitating the achievement and control of Gunn oscillations, which can potentially allow the emission of THz radiation by GaN SSDs, a time-domain Monte Carlo (MC) theoretical study is provided. The simulator has been validated by comparison with the I–V curves of similar fabricated structures, including the possibility of heating effects. A V-shaped SSD has been found to be more efficient than the square one in terms of the DC to AC conversion efficiency η. Indeed, according to our MC results, a value of η of at least 0.35% @ 270 GHz can be achieved for the V-shaped SSD at room temperature by using an adequate resonant circuit. This value can be increased up to 0.80%, even when considering the heating effects, with appropriate RLC elements. Furthermore, simulations show that when several diodes are fabricated in parallel in order to enhance the emitted power, there is no synchronization between the oscillations of all the SSDs; however, the phase-shift effects can be solved using a synchronized current injection by the attachment of a resonant circuit.Institute of Physics Publishing201620162014info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10366/130338reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)InglésICT-2009-243845SA052U13TEC2010-15413Attribution-NonCommercial-NoDerivs 3.0 Unportedhttps://creativecommons.org/licenses/by-nc-nd/3.0/info:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1303382026-06-07T06:28:51Z
dc.title.none.fl_str_mv Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits
title Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits
spellingShingle Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits
García Vasallo, Beatriz
GaN diodes
Terahertz
Resonant circuits
Monte Carlo method
title_short Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits
title_full Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits
title_fullStr Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits
title_full_unstemmed Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits
title_sort Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits
dc.creator.none.fl_str_mv García Vasallo, Beatriz
Millithaler, Jean Francois
Íñiguez-de-la-Torre, Ignacio
González Sánchez, Tomás
Ducournau, Guillaume
Gaquiere, Christophe
Mateos López, Javier
author García Vasallo, Beatriz
author_facet García Vasallo, Beatriz
Millithaler, Jean Francois
Íñiguez-de-la-Torre, Ignacio
González Sánchez, Tomás
Ducournau, Guillaume
Gaquiere, Christophe
Mateos López, Javier
author_role author
author2 Millithaler, Jean Francois
Íñiguez-de-la-Torre, Ignacio
González Sánchez, Tomás
Ducournau, Guillaume
Gaquiere, Christophe
Mateos López, Javier
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv GaN diodes
Terahertz
Resonant circuits
Monte Carlo method
topic GaN diodes
Terahertz
Resonant circuits
Monte Carlo method
description A study of the high-frequency performance of GaN-based asymmetric self-switching diodes (SSDs) designed for a room-temperature sub-THz Gunn emission, and connected to a resonant RLC parallel circuit, is reported. With the aim of facilitating the achievement and control of Gunn oscillations, which can potentially allow the emission of THz radiation by GaN SSDs, a time-domain Monte Carlo (MC) theoretical study is provided. The simulator has been validated by comparison with the I–V curves of similar fabricated structures, including the possibility of heating effects. A V-shaped SSD has been found to be more efficient than the square one in terms of the DC to AC conversion efficiency η. Indeed, according to our MC results, a value of η of at least 0.35% @ 270 GHz can be achieved for the V-shaped SSD at room temperature by using an adequate resonant circuit. This value can be increased up to 0.80%, even when considering the heating effects, with appropriate RLC elements. Furthermore, simulations show that when several diodes are fabricated in parallel in order to enhance the emitted power, there is no synchronization between the oscillations of all the SSDs; however, the phase-shift effects can be solved using a synchronized current injection by the attachment of a resonant circuit.
publishDate 2014
dc.date.none.fl_str_mv 2014
2016
2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/130338
url http://hdl.handle.net/10366/130338
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv ICT-2009-243845
SA052U13
TEC2010-15413
dc.rights.none.fl_str_mv Attribution-NonCommercial-NoDerivs 3.0 Unported
https://creativecommons.org/licenses/by-nc-nd/3.0/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Attribution-NonCommercial-NoDerivs 3.0 Unported
https://creativecommons.org/licenses/by-nc-nd/3.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Institute of Physics Publishing
publisher.none.fl_str_mv Institute of Physics Publishing
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301603

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