Importance of Spin-Orbit Interaction for the Electron Spin Relaxation in Organic Semiconductors

Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interact...

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Detalles Bibliográficos
Autores: Nuccio, Laura, Willis, Martin R., Schulz, Leander, Fratini, Simone, Messina, Fabrizio, D'Amico, Michele, Pratt, Francis Laurence, Lord, James S., Mckenzie, Iain D., Loth, Marsha A., Purushothaman, Balaji, Anthony, John E., Heeney, Martin J., Wilson, R. M., Hernández Campo, Ignacio, Cannas, Marco, Sedlak, Kamil, Kreouzis, Theo, Gillin, William P., Bernhard, Christian, Drew, Alan J.
Tipo de recurso: artículo
Fecha de publicación:2013
País:España
Institución:Universidad de Cantabria (UC)
Repositorio:UCrea Repositorio Abierto de la Universidad de Cantabria
Idioma:inglés
OAI Identifier:oai:repositorio.unican.es:10902/4395
Acceso en línea:http://hdl.handle.net/10902/4395
Access Level:acceso abierto
Descripción
Sumario:Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials.

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