Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 1.55µm
We report on the improvement of performance of InN-based saturable absorbers in fiber lasers operating at 1.55 mum by reducing the residual doping, due to the lower Burstein-Moss effect. The improved tuning of the band-to-band transition with respect to the operation wavelength leads to an enhanceme...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2019 |
| País: | España |
| Institución: | Universidad de Alcalá (UAH) |
| Repositorio: | e_Buah Biblioteca Digital Universidad de Alcalá |
| Idioma: | inglés |
| OAI Identifier: | oai:ebuah.uah.es:10017/38450 |
| Acceso en línea: | http://hdl.handle.net/10017/38450 https://dx.doi.org/10.1364/OME.9.002785 |
| Access Level: | acceso abierto |
| Palabra clave: | Electrónica Electronics |
| Sumario: | We report on the improvement of performance of InN-based saturable absorbers in fiber lasers operating at 1.55 mum by reducing the residual doping, due to the lower Burstein-Moss effect. The improved tuning of the band-to-band transition with respect to the operation wavelength leads to an enhancement of nonlinear optical effects, resulting in 30 % of modulation depth. We introduce the development of an ultrafast mode-locked fiber laser using an improved InN-based saturable absorber that incorporates a buffer layer between the active layer and the substrate. The laser delivers output pulses with a temporal width of 220 fs, a repetition rate of 5.25 MHz, and high-pulse energy of 5.8 nJ. |
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