Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge

Thin films of nanostructured silicon (ns-Si:H) were deposited by plasma-enhanced chemical vapor deposition in the presence of silicon nanoparticles at 100 C substrate temperature using silane and hydrogen gas mixture under continuous wave (cw) plasma conditions. The nanostructure of the films has be...

Full description

Bibliographic Details
Authors: Bertrán Serra, Enric, Sharma, S. N., Viera Mármol, Gregorio, Costa i Balanzat, Josep, St'ahel, P., Roca i Cabarrocas, P. (Pere)
Format: article
Status:Published version
Publication Date:1998
Country:España
Institution:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repository:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/18204
Online Access:https://hdl.handle.net/2445/18204
Access Level:Open access
Keyword:Pel·lícules fines
Nanopartícules
Silici
Cristal·lització
Thin films
Nanoparticles
Silicon
Cristallization
id ES_677308564e1febb69ce0221812c46d6a
oai_identifier_str oai:recercat.cat:2445/18204
network_acronym_str ES
network_name_str España
repository_id_str
spelling Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow dischargeBertrán Serra, EnricSharma, S. N.Viera Mármol, GregorioCosta i Balanzat, JosepSt'ahel, P.Roca i Cabarrocas, P. (Pere)Pel·lícules finesNanopartículesSiliciCristal·litzacióThin filmsNanoparticlesSiliconCristallizationThin films of nanostructured silicon (ns-Si:H) were deposited by plasma-enhanced chemical vapor deposition in the presence of silicon nanoparticles at 100 C substrate temperature using silane and hydrogen gas mixture under continuous wave (cw) plasma conditions. The nanostructure of the films has been demonstrated by diverse ways: transmission electron microscopy, Raman spectroscopy and x-ray diffraction, which have shown the presence of ordered silicon clusters (1!=2 nm) embedded in an amorphous silicon matrix. Due to the presence of these ordered domains, the films crystallize faster than standard hydrogenated amorphous silicon samples, as evidenced by electrical measurements during the thermal annealing.Materials Research Society201120111998info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion4 p.application/pdfapplication/pdfhttps://hdl.handle.net/2445/18204Articles publicats en revistes (Física Aplicada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a http://dx.doi.org/10.1557/JMR.1998.0347Journal of Materials Research, 1998, vol. 13, núm. 9, p. 2476-2479http://dx.doi.org/10.1557/JMR.1998.0347(c) Materials Research Society, 1998info:eu-repo/semantics/openAccessoai:recercat.cat:2445/182042026-05-29T05:05:01Z
dc.title.none.fl_str_mv Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge
title Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge
spellingShingle Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge
Bertrán Serra, Enric
Pel·lícules fines
Nanopartícules
Silici
Cristal·lització
Thin films
Nanoparticles
Silicon
Cristallization
title_short Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge
title_full Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge
title_fullStr Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge
title_full_unstemmed Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge
title_sort Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge
dc.creator.none.fl_str_mv Bertrán Serra, Enric
Sharma, S. N.
Viera Mármol, Gregorio
Costa i Balanzat, Josep
St'ahel, P.
Roca i Cabarrocas, P. (Pere)
author Bertrán Serra, Enric
author_facet Bertrán Serra, Enric
Sharma, S. N.
Viera Mármol, Gregorio
Costa i Balanzat, Josep
St'ahel, P.
Roca i Cabarrocas, P. (Pere)
author_role author
author2 Sharma, S. N.
Viera Mármol, Gregorio
Costa i Balanzat, Josep
St'ahel, P.
Roca i Cabarrocas, P. (Pere)
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Pel·lícules fines
Nanopartícules
Silici
Cristal·lització
Thin films
Nanoparticles
Silicon
Cristallization
topic Pel·lícules fines
Nanopartícules
Silici
Cristal·lització
Thin films
Nanoparticles
Silicon
Cristallization
description Thin films of nanostructured silicon (ns-Si:H) were deposited by plasma-enhanced chemical vapor deposition in the presence of silicon nanoparticles at 100 C substrate temperature using silane and hydrogen gas mixture under continuous wave (cw) plasma conditions. The nanostructure of the films has been demonstrated by diverse ways: transmission electron microscopy, Raman spectroscopy and x-ray diffraction, which have shown the presence of ordered silicon clusters (1!=2 nm) embedded in an amorphous silicon matrix. Due to the presence of these ordered domains, the films crystallize faster than standard hydrogenated amorphous silicon samples, as evidenced by electrical measurements during the thermal annealing.
publishDate 1998
dc.date.none.fl_str_mv 1998
2011
2011
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/18204
url https://hdl.handle.net/2445/18204
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a http://dx.doi.org/10.1557/JMR.1998.0347
Journal of Materials Research, 1998, vol. 13, núm. 9, p. 2476-2479
http://dx.doi.org/10.1557/JMR.1998.0347
dc.rights.none.fl_str_mv (c) Materials Research Society, 1998
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Materials Research Society, 1998
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4 p.
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Materials Research Society
publisher.none.fl_str_mv Materials Research Society
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869409890835890176
score 15,81155