Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge
Thin films of nanostructured silicon (ns-Si:H) were deposited by plasma-enhanced chemical vapor deposition in the presence of silicon nanoparticles at 100 C substrate temperature using silane and hydrogen gas mixture under continuous wave (cw) plasma conditions. The nanostructure of the films has be...
| Authors: | , , , , , |
|---|---|
| Format: | article |
| Status: | Published version |
| Publication Date: | 1998 |
| Country: | España |
| Institution: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repository: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/18204 |
| Online Access: | https://hdl.handle.net/2445/18204 |
| Access Level: | Open access |
| Keyword: | Pel·lícules fines Nanopartícules Silici Cristal·lització Thin films Nanoparticles Silicon Cristallization |
| id |
ES_677308564e1febb69ce0221812c46d6a |
|---|---|
| oai_identifier_str |
oai:recercat.cat:2445/18204 |
| network_acronym_str |
ES |
| network_name_str |
España |
| repository_id_str |
|
| spelling |
Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow dischargeBertrán Serra, EnricSharma, S. N.Viera Mármol, GregorioCosta i Balanzat, JosepSt'ahel, P.Roca i Cabarrocas, P. (Pere)Pel·lícules finesNanopartículesSiliciCristal·litzacióThin filmsNanoparticlesSiliconCristallizationThin films of nanostructured silicon (ns-Si:H) were deposited by plasma-enhanced chemical vapor deposition in the presence of silicon nanoparticles at 100 C substrate temperature using silane and hydrogen gas mixture under continuous wave (cw) plasma conditions. The nanostructure of the films has been demonstrated by diverse ways: transmission electron microscopy, Raman spectroscopy and x-ray diffraction, which have shown the presence of ordered silicon clusters (1!=2 nm) embedded in an amorphous silicon matrix. Due to the presence of these ordered domains, the films crystallize faster than standard hydrogenated amorphous silicon samples, as evidenced by electrical measurements during the thermal annealing.Materials Research Society201120111998info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion4 p.application/pdfapplication/pdfhttps://hdl.handle.net/2445/18204Articles publicats en revistes (Física Aplicada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a http://dx.doi.org/10.1557/JMR.1998.0347Journal of Materials Research, 1998, vol. 13, núm. 9, p. 2476-2479http://dx.doi.org/10.1557/JMR.1998.0347(c) Materials Research Society, 1998info:eu-repo/semantics/openAccessoai:recercat.cat:2445/182042026-05-29T05:05:01Z |
| dc.title.none.fl_str_mv |
Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge |
| title |
Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge |
| spellingShingle |
Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge Bertrán Serra, Enric Pel·lícules fines Nanopartícules Silici Cristal·lització Thin films Nanoparticles Silicon Cristallization |
| title_short |
Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge |
| title_full |
Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge |
| title_fullStr |
Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge |
| title_full_unstemmed |
Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge |
| title_sort |
Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge |
| dc.creator.none.fl_str_mv |
Bertrán Serra, Enric Sharma, S. N. Viera Mármol, Gregorio Costa i Balanzat, Josep St'ahel, P. Roca i Cabarrocas, P. (Pere) |
| author |
Bertrán Serra, Enric |
| author_facet |
Bertrán Serra, Enric Sharma, S. N. Viera Mármol, Gregorio Costa i Balanzat, Josep St'ahel, P. Roca i Cabarrocas, P. (Pere) |
| author_role |
author |
| author2 |
Sharma, S. N. Viera Mármol, Gregorio Costa i Balanzat, Josep St'ahel, P. Roca i Cabarrocas, P. (Pere) |
| author2_role |
author author author author author |
| dc.subject.none.fl_str_mv |
Pel·lícules fines Nanopartícules Silici Cristal·lització Thin films Nanoparticles Silicon Cristallization |
| topic |
Pel·lícules fines Nanopartícules Silici Cristal·lització Thin films Nanoparticles Silicon Cristallization |
| description |
Thin films of nanostructured silicon (ns-Si:H) were deposited by plasma-enhanced chemical vapor deposition in the presence of silicon nanoparticles at 100 C substrate temperature using silane and hydrogen gas mixture under continuous wave (cw) plasma conditions. The nanostructure of the films has been demonstrated by diverse ways: transmission electron microscopy, Raman spectroscopy and x-ray diffraction, which have shown the presence of ordered silicon clusters (1!=2 nm) embedded in an amorphous silicon matrix. Due to the presence of these ordered domains, the films crystallize faster than standard hydrogenated amorphous silicon samples, as evidenced by electrical measurements during the thermal annealing. |
| publishDate |
1998 |
| dc.date.none.fl_str_mv |
1998 2011 2011 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/2445/18204 |
| url |
https://hdl.handle.net/2445/18204 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
Reproducció del document publicat a http://dx.doi.org/10.1557/JMR.1998.0347 Journal of Materials Research, 1998, vol. 13, núm. 9, p. 2476-2479 http://dx.doi.org/10.1557/JMR.1998.0347 |
| dc.rights.none.fl_str_mv |
(c) Materials Research Society, 1998 info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
(c) Materials Research Society, 1998 |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
4 p. application/pdf application/pdf |
| dc.publisher.none.fl_str_mv |
Materials Research Society |
| publisher.none.fl_str_mv |
Materials Research Society |
| dc.source.none.fl_str_mv |
Articles publicats en revistes (Física Aplicada) reponame:Recercat. Dipósit de la Recerca de Catalunya instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| instname_str |
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| reponame_str |
Recercat. Dipósit de la Recerca de Catalunya |
| collection |
Recercat. Dipósit de la Recerca de Catalunya |
| repository.name.fl_str_mv |
|
| repository.mail.fl_str_mv |
|
| _version_ |
1869409890835890176 |
| score |
15,81155 |