Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices
The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present welldefined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing...
| Autores: | , , , , , , , , |
|---|---|
| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2018 |
| País: | España |
| Recursos: | Universidad de Barcelona |
| Repositorio: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/148184 |
| Acesso em linha: | https://hdl.handle.net/2445/148184 |
| Access Level: | acceso abierto |
| Palavra-chave: | Òxid de zinc Pel·lícules fines Teoria de la commutació Nanoelectrònica Zinc oxide Thin films Switching theory Nanoelectronics |
| Resumo: | The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present welldefined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area. Published by AIP Publishing. https://doi.org/10.1063/1.5046911 |
|---|