Orbital Hall conductivity and orbital diffusion length of vanadium thin films by Hanle magnetoresistance

[Accessible overview] Over the past decades, spintronics, which exploits the flow of spin angular momentum, has explored alternatives to conventional electronics. More recently, orbitronics, which operates with the flow of orbital angular momentum, has drawn increasing attention. This new approach o...

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Autores: Aguilar-Pujol, Montserrat X., Arango, Isabel C., Dolan, Eoin, Gobbi, Marco, Hueso, Luis E., Casanova, Félix
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/411849
Acceso en línea:http://hdl.handle.net/10261/411849
Access Level:acceso abierto
Palabra clave:Hanle magnetoresistance
Vanadium
Orbital Hall effect
Orbitronics
Spin Hall effect
id ES_643ef2d893d1845a6c43ecdc04697c32
oai_identifier_str oai:digital.csic.es:10261/411849
network_acronym_str ES
network_name_str España
repository_id_str
dc.title.none.fl_str_mv Orbital Hall conductivity and orbital diffusion length of vanadium thin films by Hanle magnetoresistance
title Orbital Hall conductivity and orbital diffusion length of vanadium thin films by Hanle magnetoresistance
spellingShingle Orbital Hall conductivity and orbital diffusion length of vanadium thin films by Hanle magnetoresistance
Aguilar-Pujol, Montserrat X.
Hanle magnetoresistance
Vanadium
Orbital Hall effect
Orbitronics
Spin Hall effect
title_short Orbital Hall conductivity and orbital diffusion length of vanadium thin films by Hanle magnetoresistance
title_full Orbital Hall conductivity and orbital diffusion length of vanadium thin films by Hanle magnetoresistance
title_fullStr Orbital Hall conductivity and orbital diffusion length of vanadium thin films by Hanle magnetoresistance
title_full_unstemmed Orbital Hall conductivity and orbital diffusion length of vanadium thin films by Hanle magnetoresistance
title_sort Orbital Hall conductivity and orbital diffusion length of vanadium thin films by Hanle magnetoresistance
dc.creator.none.fl_str_mv Aguilar-Pujol, Montserrat X.
Arango, Isabel C.
Dolan, Eoin
Gobbi, Marco
Hueso, Luis E.
Casanova, Félix
author Aguilar-Pujol, Montserrat X.
author_facet Aguilar-Pujol, Montserrat X.
Arango, Isabel C.
Dolan, Eoin
Gobbi, Marco
Hueso, Luis E.
Casanova, Félix
author_role author
author2 Arango, Isabel C.
Dolan, Eoin
Gobbi, Marco
Hueso, Luis E.
Casanova, Félix
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad del País Vasco
Eusko Jaurlaritza
European Commission
Agencia Estatal de Investigación (España)
Ministerio de Ciencia, Innovación y Universidades (España)
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Hanle magnetoresistance
Vanadium
Orbital Hall effect
Orbitronics
Spin Hall effect
topic Hanle magnetoresistance
Vanadium
Orbital Hall effect
Orbitronics
Spin Hall effect
description [Accessible overview] Over the past decades, spintronics, which exploits the flow of spin angular momentum, has explored alternatives to conventional electronics. More recently, orbitronics, which operates with the flow of orbital angular momentum, has drawn increasing attention. This new approach opens new possibilities to complement or replace current charge-based technology. In this study, we investigate vanadium (V), a light transition metal without strong spin-orbit coupling, a property usually required for spin-based effects. Therefore, V is expected to have a strong orbital response but a weak spin response, making it an ideal candidate to explore orbital phenomena. To test this, we measure how the resistance of V changes under a strong magnetic field—the Hanle magnetoresistance (HMR)—and we detect clear signals that reveal the presence and transport of orbital currents. Moreover, we observe that the magnitude of the signals is comparable to those observed in standard spintronic materials with strong spin-orbit coupling, such as platinum. From these experiments, we are also able to quantify key parameters that describe orbital transport in V. Our findings demonstrate that orbital currents can be generated and manipulated in materials with weak spin-orbit coupling, such as V. More broadly, HMR arises as a suitable technique to quantify such orbital transport.
publishDate 2025
dc.date.none.fl_str_mv 2025
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/411849
url http://hdl.handle.net/10261/411849
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/CEX2020-001038-M
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2021-122511OB-I00
info:eu-repo/grantAgreement/EC/H2020/766025
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PRE2019-089833
Aguilar-Pujol, Montserrat X.; Arango, Isabel C.; Dolan, Eoin; Gobbi, Marco; Hueso, Luis E.; Casanova, Félix; 2025; Supplemental information for Orbital Hall conductivity and orbital diffusion length of vanadium thin films by Hanle magnetoresistance [Dataset]; Elsevier; https://doi.org/10.1016/j.newton.2025.100290
https://doi.org/10.1016/j.newton.2025.100290
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869409632017973248
spelling Orbital Hall conductivity and orbital diffusion length of vanadium thin films by Hanle magnetoresistanceAguilar-Pujol, Montserrat X.Arango, Isabel C.Dolan, EoinGobbi, MarcoHueso, Luis E.Casanova, FélixHanle magnetoresistanceVanadiumOrbital Hall effectOrbitronicsSpin Hall effect[Accessible overview] Over the past decades, spintronics, which exploits the flow of spin angular momentum, has explored alternatives to conventional electronics. More recently, orbitronics, which operates with the flow of orbital angular momentum, has drawn increasing attention. This new approach opens new possibilities to complement or replace current charge-based technology. In this study, we investigate vanadium (V), a light transition metal without strong spin-orbit coupling, a property usually required for spin-based effects. Therefore, V is expected to have a strong orbital response but a weak spin response, making it an ideal candidate to explore orbital phenomena. To test this, we measure how the resistance of V changes under a strong magnetic field—the Hanle magnetoresistance (HMR)—and we detect clear signals that reveal the presence and transport of orbital currents. Moreover, we observe that the magnitude of the signals is comparable to those observed in standard spintronic materials with strong spin-orbit coupling, such as platinum. From these experiments, we are also able to quantify key parameters that describe orbital transport in V. Our findings demonstrate that orbital currents can be generated and manipulated in materials with weak spin-orbit coupling, such as V. More broadly, HMR arises as a suitable technique to quantify such orbital transport.In spintronics, the spin Hall effect has been widely used to generate and detect spin currents in materials with strong spin-orbit coupling, such as platinum (Pt) and tantalum (Ta). Recently, its orbital counterpart has drawn attention as a tool to generate and detect orbital currents and thus investigate orbital transport parameters. In this study, we investigate vanadium (V), a 3d transition metal with weak spin-orbit coupling but with a theoretically large orbital Hall conductivity. We measure a large Hanle magnetoresistance (HMR) in V thin films with a magnitude comparable to that of heavy metals and at least one order of magnitude higher than the spin Hall magnetoresistance observed in a bilayer of yttrium iron garnet (Y3Fe5O12) and V, pointing to the orbital Hall origin of the effect. A fit of the magnetic-field dependence and thickness dependence of the HMR to the standard diffusion model allows us to quantify the orbital diffusion length (∼2 nm) and the orbital Hall conductivity (∼78 [ℏ/2e] Ω−1cm−1) of V. The obtained orbital Hall conductivity is two orders of magnitude smaller than theoretical calculations of the intrinsic value, suggesting there is an important role of disorder.The authors thank Hyun-Woo Lee, Thierry Valet, and Aurélien Manchon for fruitful discussions and acknowledge the technical and human support provided by SGIker Medidas Magneticas Gipuzkoa (UPV/EHU/ERDF, EU). This work is supported by the Spanish MICIU/AEI/10.13039/501100011033 (grant no. CEX2020-001038-M), by ERDF/EU (project no. PID2021-122511OB-I00), and by the European Union’s Horizon 2020 research and innovation programme under Marie Skłodowska-Curie grant agreement no. 766025. M.X.A.-P. thanks the Spanish MICIU/AEI for a PhD fellowship (grant no. PRE-2019-089833).CEX2020-001038-MPeer reviewedElsevierUniversidad del País VascoEusko JaurlaritzaEuropean CommissionAgencia Estatal de Investigación (España)Ministerio de Ciencia, Innovación y Universidades (España)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252025info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10261/411849reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/CEX2020-001038-Minfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2021-122511OB-I00info:eu-repo/grantAgreement/EC/H2020/766025info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PRE2019-089833Aguilar-Pujol, Montserrat X.; Arango, Isabel C.; Dolan, Eoin; Gobbi, Marco; Hueso, Luis E.; Casanova, Félix; 2025; Supplemental information for Orbital Hall conductivity and orbital diffusion length of vanadium thin films by Hanle magnetoresistance [Dataset]; Elsevier; https://doi.org/10.1016/j.newton.2025.100290https://doi.org/10.1016/j.newton.2025.100290Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/4118492026-05-22T06:33:51Z
score 15.81155

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