Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers

Si1−(x+y)GexBy strained layers on Si (x≤3.4%, y≤0.4%) have been analyzed by Raman spectroscopy. Stress in the layers has not been observed to affect the Fano interaction parameters of the first‐order Si–Si Raman line. These parameters have been determined in the range of B concentrations from 5×1019...

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Autores: Pérez Rodríguez, Alejandro, Romano Rodríguez, Albert, Cabezas, R., Morante i Lleonart, Joan Ramon, Jawhari, Tariq, Hunt, Charles E.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1996
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/24746
Acceso en línea:https://hdl.handle.net/2445/24746
Access Level:acceso abierto
Palabra clave:Espectroscòpia Raman
Raman spectroscopy
Raman effect
Efecte Raman
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spelling Effect of stress and composition on the Raman spectra of etch-stop SiGeB layersPérez Rodríguez, AlejandroRomano Rodríguez, AlbertCabezas, R.Morante i Lleonart, Joan RamonJawhari, TariqHunt, Charles E.Espectroscòpia RamanRaman spectroscopyRaman effectEfecte RamanSi1−(x+y)GexBy strained layers on Si (x≤3.4%, y≤0.4%) have been analyzed by Raman spectroscopy. Stress in the layers has not been observed to affect the Fano interaction parameters of the first‐order Si–Si Raman line. These parameters have been determined in the range of B concentrations from 5×1019 to 2×1020 cm−3 and Ge fractions from 1% to 3.4%. The observed shift in the spectra has been found to depend linearly on both the germanium and boron contents. These data have been correlated with the stress measured in the layers by mechanical wafer bow measurements. The dependence of the Raman shift on the germanium content and strain agrees with that previously reported for strained SiGe layers. According to these data, Raman spectroscopy appears as an interesting tool for the nondestructive assessment of stress and composition of these layers.American Institute of Physics1996info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/24746Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.363627Journal of Applied Physics, 1996, vol. 80, núm. 10, p. 5736-5741http://dx.doi.org/10.1063/1.363627(c) American Institute of Physics, 1996info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/247462025-07-25T16:43:42Z
dc.title.none.fl_str_mv Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers
title Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers
spellingShingle Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers
Pérez Rodríguez, Alejandro
Espectroscòpia Raman
Raman spectroscopy
Raman effect
Efecte Raman
title_short Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers
title_full Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers
title_fullStr Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers
title_full_unstemmed Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers
title_sort Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers
dc.creator.none.fl_str_mv Pérez Rodríguez, Alejandro
Romano Rodríguez, Albert
Cabezas, R.
Morante i Lleonart, Joan Ramon
Jawhari, Tariq
Hunt, Charles E.
author Pérez Rodríguez, Alejandro
author_facet Pérez Rodríguez, Alejandro
Romano Rodríguez, Albert
Cabezas, R.
Morante i Lleonart, Joan Ramon
Jawhari, Tariq
Hunt, Charles E.
author_role author
author2 Romano Rodríguez, Albert
Cabezas, R.
Morante i Lleonart, Joan Ramon
Jawhari, Tariq
Hunt, Charles E.
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Espectroscòpia Raman
Raman spectroscopy
Raman effect
Efecte Raman
topic Espectroscòpia Raman
Raman spectroscopy
Raman effect
Efecte Raman
description Si1−(x+y)GexBy strained layers on Si (x≤3.4%, y≤0.4%) have been analyzed by Raman spectroscopy. Stress in the layers has not been observed to affect the Fano interaction parameters of the first‐order Si–Si Raman line. These parameters have been determined in the range of B concentrations from 5×1019 to 2×1020 cm−3 and Ge fractions from 1% to 3.4%. The observed shift in the spectra has been found to depend linearly on both the germanium and boron contents. These data have been correlated with the stress measured in the layers by mechanical wafer bow measurements. The dependence of the Raman shift on the germanium content and strain agrees with that previously reported for strained SiGe layers. According to these data, Raman spectroscopy appears as an interesting tool for the nondestructive assessment of stress and composition of these layers.
publishDate 1996
dc.date.none.fl_str_mv 1996
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/24746
url https://hdl.handle.net/2445/24746
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.363627
Journal of Applied Physics, 1996, vol. 80, núm. 10, p. 5736-5741
http://dx.doi.org/10.1063/1.363627
dc.rights.none.fl_str_mv (c) American Institute of Physics, 1996
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics, 1996
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,638193

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