Flat bands and gaps in twisted double bilayer graphene

We present electronic structure calculations of twisted double bilayer graphene (TDBG): a tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles calculations, we find that TDBG is semiconducting with a band gap t...

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Detalles Bibliográficos
Autores: Culchac, F. J., Del Grande, R. R., Capaz, Rodrigo B., Chico Gómez, Leonor María, Morell, E. Suárez
Tipo de recurso: artículo
Fecha de publicación:2020
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/130847
Acceso en línea:https://hdl.handle.net/20.500.14352/130847
Access Level:acceso abierto
Palabra clave:538.9
Moire superlattices
Excitons
Física de materiales
2211 Física del Estado Sólido
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spelling Flat bands and gaps in twisted double bilayer grapheneCulchac, F. J.Del Grande, R. R.Capaz, Rodrigo B.Chico Gómez, Leonor MaríaMorell, E. Suárez538.9Moire superlatticesExcitonsFísica de materiales2211 Física del Estado SólidoWe present electronic structure calculations of twisted double bilayer graphene (TDBG): a tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles calculations, we find that TDBG is semiconducting with a band gap that depends on the twist angle, that can be tuned by an external electric field. The gap is consistent with TDBG symmetry and its magnitude is related to surface effects, driving electron transfer from outer to inner layers. The surface effect competes with an energy upshift of localized states at inner layers, giving rise to the peculiar angle dependence of the band gap, which reduces at low angles. For these low twist angles, the TDBG develops flat bands, in which electrons in the inner layers are localized at the AA regions, as in twisted bilayer graphene.Royal Society of ChemistryUniversidad Complutense de Madrid20202020-01-0120202020-01-01journal articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/130847reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/1308472026-06-02T12:44:21Z
dc.title.none.fl_str_mv Flat bands and gaps in twisted double bilayer graphene
title Flat bands and gaps in twisted double bilayer graphene
spellingShingle Flat bands and gaps in twisted double bilayer graphene
Culchac, F. J.
538.9
Moire superlattices
Excitons
Física de materiales
2211 Física del Estado Sólido
title_short Flat bands and gaps in twisted double bilayer graphene
title_full Flat bands and gaps in twisted double bilayer graphene
title_fullStr Flat bands and gaps in twisted double bilayer graphene
title_full_unstemmed Flat bands and gaps in twisted double bilayer graphene
title_sort Flat bands and gaps in twisted double bilayer graphene
dc.creator.none.fl_str_mv Culchac, F. J.
Del Grande, R. R.
Capaz, Rodrigo B.
Chico Gómez, Leonor María
Morell, E. Suárez
author Culchac, F. J.
author_facet Culchac, F. J.
Del Grande, R. R.
Capaz, Rodrigo B.
Chico Gómez, Leonor María
Morell, E. Suárez
author_role author
author2 Del Grande, R. R.
Capaz, Rodrigo B.
Chico Gómez, Leonor María
Morell, E. Suárez
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Moire superlattices
Excitons
Física de materiales
2211 Física del Estado Sólido
topic 538.9
Moire superlattices
Excitons
Física de materiales
2211 Física del Estado Sólido
description We present electronic structure calculations of twisted double bilayer graphene (TDBG): a tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles calculations, we find that TDBG is semiconducting with a band gap that depends on the twist angle, that can be tuned by an external electric field. The gap is consistent with TDBG symmetry and its magnitude is related to surface effects, driving electron transfer from outer to inner layers. The surface effect competes with an energy upshift of localized states at inner layers, giving rise to the peculiar angle dependence of the band gap, which reduces at low angles. For these low twist angles, the TDBG develops flat bands, in which electrons in the inner layers are localized at the AA regions, as in twisted bilayer graphene.
publishDate 2020
dc.date.none.fl_str_mv 2020
2020-01-01
2020
2020-01-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/130847
url https://hdl.handle.net/20.500.14352/130847
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Royal Society of Chemistry
publisher.none.fl_str_mv Royal Society of Chemistry
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.812429

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