Tailoring magnetization and anisotropy of tetragonal Mn3Ga thin films by strain-induced growth and spin orbit coupling
Tetragonal Mn3Ga thin films were epitaxially grown with and without strain on Cr and Mo crystalline buffer layers, respectively, using rf-magnetron sputtering. Epilayers grown on Cr with a lattice mismatch of 4.16%, exhibit a high magnetization of 220 kAm−1 and high perpendicular magnetic anisotropy...
| Autores: | , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universidad de Castilla-La Mancha |
| Repositorio: | RUIdeRA. Repositorio Institucional de la UCLM |
| OAI Identifier: | oai:ruidera.uclm.es:10578/18292 |
| Acceso en línea: | http://hdl.handle.net/10578/18292 |
| Access Level: | acceso abierto |
| Palabra clave: | Thin films and multilayers Magnetic properties Deposition Interfaces |
| Sumario: | Tetragonal Mn3Ga thin films were epitaxially grown with and without strain on Cr and Mo crystalline buffer layers, respectively, using rf-magnetron sputtering. Epilayers grown on Cr with a lattice mismatch of 4.16%, exhibit a high magnetization of 220 kAm−1 and high perpendicular magnetic anisotropy. These characteristics are attributed to interfacial strain. Additionally, a soft ferromagnetic component is observed in these films but not in relaxed layers grown on Mo, where Δa/a is −0.1%. These latest films exhibit a low magnetization of 80 kAm−1 and both perpendicular and in-plane magnetic anisotropies. We propose that high spin orbit coupling of Mo-5s14d5 orbitals from the buffer layer and strong hybridization with Mn3+-3d4 orbitals from the magnetic layer are at the origin of in-plane anisotropy at the interface, while Mn3Ga magnetocrystalline anisotropy leads to perpendicular anisotropy on the rest of the film. |
|---|