Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology
The fabrication of pH-sensitive ISFET devices in an unmodified two-metal commercial CMOS technology (1.0 um from Atmel-ES2) is reported. The ISFET devices have a gate structure compatible with the CMOS process, with an electrically floating electrode consisting on polysilicon plus the two metals. Th...
| Autores: | , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 1999 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/64156 |
| Acceso en línea: | http://hdl.handle.net/10261/64156 |
| Access Level: | acceso abierto |
| Palabra clave: | ISFET CMOS sensors |
| Sumario: | The fabrication of pH-sensitive ISFET devices in an unmodified two-metal commercial CMOS technology (1.0 um from Atmel-ES2) is reported. The ISFET devices have a gate structure compatible with the CMOS process, with an electrically floating electrode consisting on polysilicon plus the two metals. The passivation oxynitride layer acts as the pH-sensitive material in contact with the liquid solution. The devices have shown good operating characteristics, with a 47 mV/pH response. The use of a commercial CMOS process allows the straightforward integration of signal-processing circuitry. An ISFET amplifier circuit has been integrated with the ISFET sensors. |
|---|