Technological advances of graphene solution-gated field-effect transistors for biosensing applications

In response to the growing need for highly sensitive, selective, and stable devices for biomedical applications, this thesis focuses on developing graphene Solution-Gated Field-Effect transistors (gSGFETs) for biosensing. Graphene’s combination of electrical performance, biocompatibility, and surfac...

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Detalles Bibliográficos
Autor: Bono Ros, Laura
Tipo de recurso: tesis de maestría
Fecha de publicación:2025
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/452108
Acceso en línea:https://hdl.handle.net/2117/452108
Access Level:acceso abierto
Palabra clave:Graphene
Field-effect transistors
Biosensors
GSGFET
Alumina (Al2O3)
ALD
Biosensing applications
Grafè
Transistors d'efecte de camp
Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors
Descripción
Sumario:In response to the growing need for highly sensitive, selective, and stable devices for biomedical applications, this thesis focuses on developing graphene Solution-Gated Field-Effect transistors (gSGFETs) for biosensing. Graphene’s combination of electrical performance, biocompatibility, and surface sensitivity makes it ideal for detecting biological analytes. A key aspect of gSGFETs is the passivation layer, which isolates the device from the electrolyte while allowing access to the active channel. Conventional materials like SU-8 offer biocompatibility but suffer from limited chemical stability. Alternatively, the use of alumina (Al₂O₃), deposited by atomic layer deposition (ALD), has been demonstrated to be a suitable alternative. This work investigates the implementation of the alumina passivation strategy in the IMB-CNM clean room. The fabricated devices were characterized both morphologically and electrically, and benchmarked against SU-8-based and commercial technologies. They showed reduced gate leakage and improved chemical robustness, supporting their suitability for long-term biosensing applications and functionalization processes.