Multiple threshold potentials in nanofluidic pores with negative differential resistance

[EN] Negative differential resistance (NDR) phenomena are characterized by a decrease in the electrical current caused by an increase in the applied voltage beyond a threshold value. They are of fundamental interest for nanofluidic sensing and actuating because small changes around the threshold vol...

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Detalles Bibliográficos
Autores: Portillo, Sergio, Mafe, Salvador, Cervera Montesinos, Javier, Ramirez Hoyos, Patricio|||0000-0002-0067-4887, Bisquert, Juan|||0000-0003-4987-4887
Tipo de recurso: artículo
Fecha de publicación:2025
País:España
Institución:Universitat Politècnica de València (UPV)
Repositorio:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
Idioma:inglés
OAI Identifier:oai:riunet.upv.es:10251/225324
Acceso en línea:https://riunet.upv.es/handle/10251/225324
Access Level:acceso embargado
Palabra clave:Nanopores
Negative differential resistance
Precipitation
Multiple threshold potentials
Logical functions
Descripción
Sumario:[EN] Negative differential resistance (NDR) phenomena are characterized by a decrease in the electrical current caused by an increase in the applied voltage beyond a threshold value. They are of fundamental interest for nanofluidic sensing and actuating because small changes around the threshold voltage can be amplified under NDR conditions. We have considered here precipitation-induced NDR effects in nanopores bathed in aqueous electrolyte solutions. In the case of multipore membranes, different NDR regions with on and off conductances appear due to distinct threshold potentials. This phenomenon should be of interest for nanofluidic multiple-state memories and multivalued input/output functionalities. As a proof of concept, we implement Boolean (XOR) and reversible (Feynman) logical functions using all-electrical inputs and outputs signals (applied voltage and current) in an electrochemical cell.